1995
DOI: 10.1103/physrevb.51.14035
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Experimental and theoretical electronic distributions in Al-Cu-based alloys

Abstract: We report on experimental and calculated occupied and unoccupied electronic distributions of crystalline A12Cu and various Al-Cu-Fe alloys. The experiments have been carried out by means of soft-x-rayspectroscopy and photoelectron-spectroscopy techniques. The densities of states have been calculated using either the linear-muffin-tin-orbital atomic-sphere-approximation or the augmented-plane-wave methods. The comparison between experiment and calculations is discussed. We pay special attention to the effect of… Show more

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Cited by 28 publications
(16 citation statements)
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“…The authors assigned the qualitative difference between these results and the previous data to the small number of k points involved in the earlier calculations. On the other hand, calculations performed for usual intermetallics close to quasicrystals or very low order approximants did not display such numerous narrow spikes [11][12][13][14]. It is also important to note that up to date no experiment revealed the spiky structure of the DOS predicted theoretically, whatever the technique and the resolution of the measurement [15][16][17].…”
Section: Densities Of States Calculationsmentioning
confidence: 86%
“…The authors assigned the qualitative difference between these results and the previous data to the small number of k points involved in the earlier calculations. On the other hand, calculations performed for usual intermetallics close to quasicrystals or very low order approximants did not display such numerous narrow spikes [11][12][13][14]. It is also important to note that up to date no experiment revealed the spiky structure of the DOS predicted theoretically, whatever the technique and the resolution of the measurement [15][16][17].…”
Section: Densities Of States Calculationsmentioning
confidence: 86%
“…To this end, we refer to the computed DOS obtained for the ω compound of composition Al 70 Cu 20 Fe 10 and tetragonal structure (P4/mnc; a = 0.6336 nm; c = 1.4870 nm) [43]. Ab initio computation of the DOS was based on the linear muffin-tin orbital (LMTO) method in the augmented plane wave approximation, see [43] for details.…”
Section: Discussion In the Light Of Dos Measurementsmentioning
confidence: 99%
“…[1][2][3][4][5][6][7][8][9][10] This was motivated in part by the possibility of developing CMAs as new coating materials with low friction, reduced adhesion, and good corrosion resistance for technological applications. [11][12][13] Those surface properties are related to the peculiar electronic structure of CMAs characterized by a pseudogap at the Fermi level, usually associated with poor metallic behavior.…”
Section: Introductionmentioning
confidence: 99%