Experimental and simulation study for ultrathin (∼100 μm) mono crystalline silicon solar cell with 156×156 mm2 area

Seon, Kyeom; Baek, Tae Hyeon; Kang, Min Gu; Choi, Sung Jin; Kang, Gi‐Hwan; Yu, Gwon-Jong; Lee, Jeong Chul; Myoung, Jae Min; Song, Hyunwook

doi:10.1007/s12540-014-3021-6

Cited by 15 publications

(10 citation statements)

References 10 publications

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“…For instance, Sheoran et al 32 reported that the temperature of 115 μm thick wafers was 70 °C higher than that of 280 μm thick ones, for the same belt furnace temperature. Do et al 25 and Schiele et al 26 , that developed 100 μm thick devices, did not comment about the firing temperature used.…”

Section: Methodsmentioning

confidence: 99%

“…Although these structures can achieve high efficiencies, several processing steps are needed and the manufacturing process may be not cost-effective. Otherwise, large area PERC devices, that is, without diffusion on the rear face and both faces passivated by SiN x :H, were produced using 100 μm thick p-type Si wafers and reached the efficiency of 16.8% 25 . Thin n-type solar cells with whole rear face covered by aluminum achieved the efficiency of 18% and 19% for homogenous and selective phosphorus front surface field 26 .…”

Section: Introductionmentioning

confidence: 99%

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Cost-Effective Thin n-type Silicon Solar Cells with Rear Emitter

et al. 2020

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Cost-Effective Thin n-type Silicon Solar Cells with Rear Emitter

et al. 2020

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“…The J sc value of the record-efficiency c-Si solar cell is indicated by an arrow 6 . (b-g) Sketches of notable light-trapping schemes used in state-of-the-art thin and ultrathin c-Si cells: (b) micron-scale random pyramids 10,12213,20,[121][122][123][124][125][126] , (c) front inverted nanopyramid arrays 21,22 , (d) amorphous ordered nanopatterning 23 , (e) slanted cones 29 , (f) front and back nanocone arrays 27 and (g) photonic crystals 31 In the sub-10 µm range, three noticeable experimental works have demonstrated a shortcircuit current density exceeding double-pass absorption 21,22,23 . Their common light-trapping strategy is based on the use of a sub-micrometer front texturing of silicon coupled with a metal back reflector.…”

Section: Box 1: Light-trapping In Solar Cellsmentioning

confidence: 99%

Progress and prospects for ultrathin solar cells

2020

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Ultrathin solar cells with thicknesses at least 10 times lower than conventional solar cells could offer a unique potential to efficiently convert solar energy into electricity while enabling material savings, shorter deposition times, and improved carrier collection in defective absorber materials. Efficient light absorption and hence high power conversion efficiency could be retained in ultrathin absorbers using light-trapping structures that enhance the optical path. Nevertheless, several technical challenges prevent the realization of a practical device. Here we review the state-of-the-art of c-Si, GaAs and Cu(In,Ga)(S,Se) 2 ultrathin solar cells and compare their optical performances against theoretical light-trapping models. We then address challenges in the fabrication of ultrathin absorber layers and in nanoscale patterning of light-trapping structures and discuss strategies to ensure efficient charge collection. Finally, we provide perspectives to combine photonic and electrical constraints into practical architectures for ultrathin solar cells and identify future research directions and potential applications of ultrathin photovoltaic technologies.

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“…Com silício tipo p crescido pela técnica Czochralski (Cz) e estruturas n + p tipo PERC (passivated emitter rear contact), isto é, sem campo retrodifusor na face posterior e evitando-se assim a camada de alumínio, Do et al [4] produziram células solares de 156 mm x 156 mm com eficiência de 16,8 %. Usando lâminas de silício FZ (float zone), tipo p, de 130 μm de espessura, Lee e colaboradores [5] reportaram eficiências de 17,2 % para estruturas PERC e de 16,2 % para estruturas convencionais com alumínio na face posterior.…”

Section: Introductionunclassified

Desenvolvimento de células solares n + np + em lâminas de silício de 100 µm de espessura

et al. 2018

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RESUMONo custo de produção de uma célula solar, a lâmina de silício representa da ordem de 50 % do valor final do dispositivo. Para reduzir os custos, vem sendo proposta a diminuição das espessuras atuais de 180-200 µm para 100-120 µm. Embora o silício tipo p seja o mais usado na fabricação de células solares, este material é suscetível à degradação devido à interação boro-oxigênio. Os dispositivos fabricados em lâminas de Si tipo n, dopadas com fósforo não apresentam tal degradação e têm potencial de obtenção de altas eficiências devido ao maior tempo de vida dos portadores de carga minoritários. O objetivo deste trabalho é apresentar o desenvolvimento de células solares n + np + fabricadas sobre lâminas de silício Cz (Czochralski) com 100 μm de espessura. Foram fabricados dispositivos finos com a estrutura n + np + e comparados com os dispositivos n + pp + fabricados em lâminas convencionais. A eficiência média alcançada foi de (14,6 ± 0,4) % e o dispositivo mais eficiente atingiu 15,3 %. O maior valor de eficiência ficou abaixo do obtido com estruturas n + pp + de 200 μm de espessura, quando atingiu-se uma eficiência de 16,2 %. O principal parâmetro que reduziu a eficiência das células finas foi o fator de forma, que alcançou um valor máximo de 0,748. Embora a eficiência seja menor com as lâminas finas, obteve-se uma baixa relação massa/potência, de 1,5 g/W, valor que é aproximadamente 53 % inferior ao obtido quando foram usadas lâminas espessas tipo p. Palavras-chave:Células solares; Lâminas de silício finas; Silício tipo n. ABSTRACTIn the solar cell production cost, the silicon wafer represents roughly 50 % of the final value of the device. To lower the costs, the reduction of the current wafer thickness from 180-200 µm to 100-120 µm has been proposed. Although the p-type silicon is used to manufacture solar cells, it is susceptible to degradation due to boron-oxygen interaction. The devices manufactured in n-type silicon wafers doped with phosphorus do not present such degradation and has the potential of achieving higher efficiencies due to the larger minority charge carrier lifetime. The aim of this work is to present the development of n + np + solar cells fabricated in Cz silicon wafers 100 μm thick. Thin devices were manufactured with the n + np + structure and compared to n + pp + devices manufactured in standard thick wafers. The average efficiency of (14.6 ± 0.4) % was achieved and the most efficient device reached 15.3%. The efficiency was lower than obtained with n + pp + thick devices, which presented 16.2 %. The main parameter that reduced the efficiency of thin cells was the fill factor, which reached a maximum value of 0.748. Although the efficiency reached by thin n-type devices was worse than thick p-type ones, the former achieved a low mass/power ratio of 1.5 g/W, which is approximately 53 % lower than that obtained from thick p-type devices.

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Experimental and simulation study for ultrathin (∼100 μm) mono crystalline silicon solar cell with 156×156 mm2 area

Cited by 15 publications

References 10 publications

Cost-Effective Thin n-type Silicon Solar Cells with Rear Emitter

Cost-Effective Thin n-type Silicon Solar Cells with Rear Emitter

Progress and prospects for ultrathin solar cells

Desenvolvimento de células solares n + np + em lâminas de silício de 100 µm de espessura

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