2019
DOI: 10.1016/j.ijheatmasstransfer.2019.06.001
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Experimental and numerical studies of tungsten line growth in laser chemical vapor deposition

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Cited by 4 publications
(4 citation statements)
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“…On the other hand, the rate of chemical reactions usually increases with increasing the pressure of the system. Overall, nucleation in the gaseous stage is homogeneous, whereas it is heterogeneous on the substrate surface [69][70][71][72][73][74].…”
Section: Deposition Mechanism In the Cvd Processmentioning
confidence: 99%
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“…On the other hand, the rate of chemical reactions usually increases with increasing the pressure of the system. Overall, nucleation in the gaseous stage is homogeneous, whereas it is heterogeneous on the substrate surface [69][70][71][72][73][74].…”
Section: Deposition Mechanism In the Cvd Processmentioning
confidence: 99%
“…Generally, the basic steps in the CVD process can be classified as follows [71][72][73][74][75]: produced and the substrate. At very high temperatures, where the amount of supersaturation is high and the reactant gases are very hot, the nucleation rate is homogeneous in the CVD process, thereby precipitating solid particles on the hot substrate.…”
Section: Deposition Mechanism In the Cvd Processmentioning
confidence: 99%
See 1 more Smart Citation
“…), laser beam machining [9], focused ion beam machining [10,11], electro-discharge machining [12], and chemical/electrochemical machining [13,14], etc. The additive-M 4 processes produce the objects by depositing materials typically layer by layer and include electrochemical deposition (ECD) [15], electroless plating [16,17], focused-ion beam induced deposition (FIBID) [18], laser-chemical vapor deposition (LCVD) [19], etc. The additive-M 4 processes are increasingly attractive since they can flexibly create geometric shapes and controllably tailor the material performances synchronously.…”
Section: Introductionmentioning
confidence: 99%