Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions

Hayakawa, Y.; Okano, Yasunori; Hirata, Akira; Imaishi, Nobuyuki; Kumagiri, Y; Zhong, Xiaochun; Xie, Xiaogang; Yuan, Bifei; Wu, Friedrich; Liu, H; Yamaguchi, Tomuo; Kumagawa, Masashi

doi:10.1016/s0022-0248(00)00340-7

Cited by 42 publications

(27 citation statements)

References 23 publications

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“…The needle crystals were found to have formed during the cooling of InGaSb. This result is similar to the needle crystal formed in our space experiment under microgravity condition [10]. In the case of the needle crystal formed under reduced gravity (10-2 G) and normal gravity, indium composition should be as small as 0.005.…”

Section: Resultssupporting

confidence: 87%

See 1 more Smart Citation

Airplane and Drop Experiments on Crystallization of In_xGa_1-xSb Semiconductor under Different Gravity Conditions

et al. 2001

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Melting and crystallization experiments of InGaSb were done under the reduced gravity condition (102G) in an airplane and at the normal gravity condition (IG) in the laboratory. Crystallized InGaSb was found to contain many needle crystals in both the cases. Reduced gravity condition was found to be more conducive for crystal growth than the normal gravity condition. Formation of spherical projections on the surface of InGaSb during its crystallization was in-situ observed using a high speed CCD camera in the drop experiment. Spherical projections showed dependence of gravity during its growth. Indium compositions in the spherical projections were found to vary depending on the temperature.

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Section: Resultssupporting

confidence: 87%

“…The indium compositions in this area were different from those in the main body of the sample. The other experiment was carried out in a Chinese recoverable satellite in 1996 [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Airplane and Drop Experiments on Crystallization of In_xGa_1-xSb Semiconductor under Different Gravity Conditions

et al. 2001

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“…The obtained result was consistent with our previous microgravity experiment. 17 The dissolution of GaSb seed crystals stopped when supersaturation was attained at the interface and the crystal started to grow. The indium composition along the vertical direction ( Figure 2a,c) measured by EPMA shows that it gradually decreased along the growth direction.…”

Section: Discussionmentioning

confidence: 99%

“…15 Our group has also carried out microgravity experiments in a drop tower, space shuttle, and Chinese recoverable satellite in which the formation of a projection during solidification, needle crystal formation, growth morphology, composition distribution, and melt mixing were explained. [16][17][18] We analysed the effect of substrate orientation on the morphological change of the solid-liquid interface, and the orientation dependence of the step kinetic coefficient at the GaP/GaP interface was reported earlier. 19 A numerical model was developed to evaluate the effect of crystal orientation on the growth rate.…”

Section: Introductionmentioning

confidence: 99%

Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station

et al. 2016

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InGaSb ternary alloys were grown from GaSb (111)A and B faces (Ga and Sb faces) under microgravity conditions on board the International Space Station by a vertical gradient freezing method. The dissolution process of the Ga and Sb faces of GaSb and orientation-dependent growth properties of InGaSb were analysed. The dissolution of GaSb(111)B was greater than that of (111)A, which was found from the remaining undissolved seed and feed crystals. The higher dissolution of the Sb face was explained based on the number of atoms at that face, and its bonding with the next atomic layer. The growth interface shape was almost flat in both cases. The indium composition in both InGaSb samples was uniform in the radial direction and it gradually decreased along the growth direction because of segregation. The growth rate of InGaSb from GaSb (111)B was found to be higher than that of GaSb (111)A because of the higher dissolution of GaSb (111)B.

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“…This is mainly due to the suppression of convective flow in the solution (melt). Therefore, several experimental and numerical studies were performed for a better understanding of the InGaSb crystal dissolution and growth process by comparing the terrestrial and microgravity conditions [3][4][5][6][7][8][9]. Also recently Inatomi et al have compared the InGaSb crystals grown on the ISS and on Earth, and demonstrated that the shape of the growth interface was a slightly concave towards the seed under microgravity [10].…”

Section: Introductionmentioning

confidence: 99%

Numerical simulation of InGaSb crystals growth under microgravity onboard the international space station

Jin¹,

Mirsandi²,

Yamamoto³

et al. 2016

Proc. 14th Int. Conf. On Global Research and Education, Inter-Academia 2015

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In x Ga 1-x Sb bulk crystal was grown using a GaSb(seed)/InSb/GaSb(feed) sandwich-structured system onboard the International Space Station (ISS). In order to investigate the transport phenomena especially in terms of interface shapes and dissolution heights, the dissolution process was simulated under a micro-gravity level of the ISS. Simulation results showed that the seed/melt interface was concave towards the seed due to the temperature distribution of the system. This prediction is in good agreement with the results of our previous experimental study.

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Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions

Cited by 42 publications

References 23 publications

Airplane and Drop Experiments on Crystallization of In_xGa_1-xSb Semiconductor under Different Gravity Conditions

Airplane and Drop Experiments on Crystallization of In_xGa_1-xSb Semiconductor under Different Gravity Conditions

Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station

Numerical simulation of InGaSb crystals growth under microgravity onboard the international space station

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Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions

Cited by 42 publications

References 23 publications

Airplane and Drop Experiments on Crystallization of InxGa1-xSb Semiconductor under Different Gravity Conditions

Airplane and Drop Experiments on Crystallization of InxGa1-xSb Semiconductor under Different Gravity Conditions

Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station

Numerical simulation of InGaSb crystals growth under microgravity onboard the international space station

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Airplane and Drop Experiments on Crystallization of In_xGa_1-xSb Semiconductor under Different Gravity Conditions

Airplane and Drop Experiments on Crystallization of In_xGa_1-xSb Semiconductor under Different Gravity Conditions