Experimental and numerical analysis of coupled interfacial kinetics and heat transport during the axial heat flux close to the phase interface growth of BGO single crystals

Bykova, S. V.; Golyshev, V. D.; Гоник, М. А.; Tsvetovsky, V. B.; Deshko, V.; Karvatskii, Аnton; Lenkin, A. V.; Brandon, Simon; Weinstein, Oleg; Virozub, A.; Derby, Jeffrey J.; Yeckel, Andrew; Sonda, Paul

doi:10.1016/j.jcrysgro.2004.02.052

Cited by 4 publications

(5 citation statements)

References 10 publications

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“…3.5b used 58 600 equations), but acceptable accuracy can be obtained at reasonable cost for two-dimensional problems. Additional details on these calculations can be found in [89].…”

Section: A Simple Fixed-grid Methodsmentioning

confidence: 99%

Computer Modelling of Bulk Crystal Growth

Yeckel¹,

Derby²

2010

Bulk Crystal Growth of Electronic, Optical &Amp; Optoelectronic Materials

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“…3.5b used 58 600 equations), but acceptable accuracy can be obtained at reasonable cost for two-dimensional problems. Additional details on these calculations can be found in [89].…”

Section: A Simple Fixed-grid Methodsmentioning

confidence: 99%

Computer Modelling of Bulk Crystal Growth

Yeckel¹,

Derby²

2010

Bulk Crystal Growth of Electronic, Optical &Amp; Optoelectronic Materials

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“…The "axial heat flux close to the phase interface" growth method (AHP method; see [15,16]) was employed for measurements of facet supercooling and research into interfacial kinetics features during the growth of the dielectric crystals. The AHP technique for vertical gradient freezing of crystallization allows the possibility of conducting the experiment in the absence of the effect of melt convection on heat transfer [11]. This gives the possibility, in turn, to improve the accuracy of the computations of crystal growth rate.…”

Section: The Experimental Setup and Proceduresmentioning

confidence: 99%

“…The model takes into account a radiation-conductive heat transfer (RCT) for the crystal, conductive heat transfer for the melt, and the crucible, and a radiation heat transfer for the diathermic cavity. Convective heat exchange is not taken into account in the melt due to the insignificance of its contribution to heat exchange [11]. The model takes into account the semitransparent crystal and opaque melt properties jump and the latent heat of phase transfer on the interface.…”

Section: Description Of the Numerical Modelmentioning

confidence: 99%

“…The facet formation depends essentially on a deflection of the interface and also on whether the interface is convex or concave toward the melt [22]. It has been shown that conditions in which in situ experiments are carried out are not stationary [11]. In these conditions, the growth rate dynamic of facet V (t) should depend strongly on the dynamic of temperature distribution on borders of the solution region.…”

Section: The Procedures Of the Investigation Of The Role Of Temperaturmentioning

confidence: 99%

“…However, the unexpected V = f ( T ) dependence obtained in [6,8] can also be explained by an inaccuracy in determining the time dependence of growth rate, caused by using a rather one-dimensional heat transfer model [6,8]. This reason was investigated [11] and it was shown that for a (211) BGO crystallographic orientation, the thermal convection and thermal radiation do not influence the character of the obtained V = f ( T ) dependence.…”

Section: Introductionmentioning

confidence: 99%

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Numerical and Experimental Investigation of Crystal Growth Rate Dependence on Facet Undercooling for Dielectric Crystal Growth from the Melt

Bykova

Golyshev

Гоник

et al. 2006

Heat Transfer Engineering

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Combined experimental and numerical tools are developed and used to define more exactly the growth kinetic relations for (211) crystallographic orientation of Bi 4 Ge 3 O 12 (BGO) crystal growth-namely, the dependence of crystal growth rate V on supercooling, T of the melt/crystal interface. A new apparatus for in situ measurements of the time dependence of the supercooling, T(t), was used, and a new, two-dimensional numerical model was applied to analyze the effect of temperature boundary conditions and faceting phenomena on the character of the observed V( T) dependence. The measurements of the T(t) dependence show that there is a large enough undercooling and a novel effect of the appearance of the local maximum on T(t) dependence at the finish of crystallization. Results on V( T) dependence show that, for the variant of the crystal growth technique used (melt cooling during axial heating process method [AHP]), the type of the V( T) dependence does not depend on boundary conditions. The new investigations illustrate the superlinear behavior for V( T) dependence for (211) BGO crystallographic orientation and show that previous data on sublinear behavior of V( T) dependence for this crystallographic orientation of BGO have not been justified.

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Effect of the ceramic tube shape on global heat transfer, thermal stress and crystallization front in low thermal gradient (LTG) Czochralski growth of scintillating BGO crystal

Omid¹,

Tavakoli²

2018

Mater. Res. Express

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Experimental and numerical analysis of coupled interfacial kinetics and heat transport during the axial heat flux close to the phase interface growth of BGO single crystals

Cited by 4 publications

References 10 publications

Computer Modelling of Bulk Crystal Growth

Computer Modelling of Bulk Crystal Growth

Numerical and Experimental Investigation of Crystal Growth Rate Dependence on Facet Undercooling for Dielectric Crystal Growth from the Melt

Effect of the ceramic tube shape on global heat transfer, thermal stress and crystallization front in low thermal gradient (LTG) Czochralski growth of scintillating BGO crystal

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