Experimental and computational study of field emission characteristics from amorphous carbon single nanotips grown by carbon contamination - I. Experiments and computation

Edgcombe, C. J.; Valdrè, U.

doi:10.1080/13642810110121018

Cited by 51 publications

(40 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although it is difficult from our experiments to identify the exact distribution of the emitting tips and the actual local fields on the emitting tips, the silicon nanowires in this letter provide some qualitative information regarding the field emission enhancement. According to the simulations of Edgcombe and Valdré, 19 the value of ␤ is proportional to ͑2.5+ h / r͒ 0.9 , where h is the length and r is the diameter of the emitting tip. In our previous study, 11 increasing the hydrogen plasma etching time sharpened the silicon nanowires and increased their lengths; thus, the field enhancement factor increased upon increasing the etching time.…”

mentioning

confidence: 99%

Hydrogen plasma dry etching method for field emission application

Cheng

Shieh

Huang

et al. 2006

Applied Physics Letters

View full text Add to dashboard Cite

The ability to fabricate large-area, uniform emitters is an important factor in many vacuum microelectronics applications, especially for field emission displays. In this letter, we measured the field emission properties of uniform silicon nanowire emitters prepared by hydrogen plasma etching using in situ high-resolution scanning electron microscopy and a tungsten anode of 1μm diameter. Our results indicate that the field emission properties are improved upon increasing the etching time; this process sharpens the nanowires’ geometry and lowers their work function. These highly uniform (with respect to length, diameter, and distribution) nanowires display great potential for application within many field emission nanoelectronics devices.

show abstract

mentioning

confidence: 99%

Hydrogen plasma dry etching method for field emission application

Cheng

Shieh

Huang

et al. 2006

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…The ␥ factor of the diode-type field emitter can be approximated by the formula of ␥ = 1.2͑h / r + 2.15͒ 0.9 ϫ ͓1 − exp͑−2.3172s / h͔͒ in the range of 4 ഛ h / r ഛ 3000 by taking into consideration the effect of the interNCW distance and length of the NCW. [15][16][17] The h, r, and s symbols denote the length, radius of NCW, and interNCW distance between NCWs, respectively. To achieve the measured ␥ value, the interNCW distance has a value of ͑s 1 ജ 16 m͒ for H-NCWs and ͑s 2 ജ 32 m͒ for L-NCWs, assuming h =30 m, r = 0.01 m, as shown in the inset of Fig.…”

mentioning

confidence: 99%

Field emission properties of vertically aligned iron nanocluster wires grown on a glass substrate

Kim

Jang

Lee

et al. 2004

Applied Physics Letters

View full text Add to dashboard Cite

Vertically aligned nanocluster wires (NCWs) were synthesized on indium-tin-oxide-coated glass substrates via the thermal decomposition of Fe(CO)5 with a resistive heater under a magnetic field. The density of the aligned NCWs was controlled by varying the flow rate of the carrier gas. The low-density NCWs showed better field emission characteristics, with a low turn-on field of about 4V∕μm and a current density as high as 3mA∕cm2 at 7.6V∕μm. The field enhancement factor (γ) was determined to be ∼1200 for high-density NCWs and ∼1600 for low-density NCWs, which is comparable to those of carbon nanotubes.

show abstract

“…Examples are probes ͑functionalized tips for scanning probe microscopy or for local conductivity measurements͒, [6][7][8][9][10][11][12][13][14] conducting or nonconducting joining technique, [15][16][17][18][19][20] conducting wires, [21][22][23][24] mask repair, [25][26][27] electron sources, [28][29][30] micro-Hall and micro superconducting quantum interference devices, 31,32 nanotweezers and gripping devices, 33,34 nano-optic patterns or photonic crystals, 35,36 entire miniature electron optical systems, 37 diodes, 38 and seeds for nanotube growth. 39 Despite its long history, detailed knowledge of the process is still very much dispersed.…”

Section: Introductionmentioning

confidence: 99%

A critical literature review of focused electron beam induced deposition

Dorp

Hagen

2008

Journal of Applied Physics

482

577

View full text Add to dashboard Cite

An extensive review is given of the results from literature on electron beam induced deposition. Electron beam induced deposition is a complex process, where many and often mutually dependent factors are involved. The process has been studied by many over many years in many different experimental setups, so it is not surprising that there is a great variety of experimental results. To come to a better understanding of the process, it is important to see to which extent the experimental results are consistent with each other and with the existing model. All results from literature were categorized by sorting the data according to the specific parameter that was varied ͑current density, acceleration voltage, scan patterns, etc.͒. Each of these parameters can have an effect on the final deposit properties, such as the physical dimensions, the composition, the morphology, or the conductivity. For each parameter-property combination, the available data are discussed and ͑as far as possible͒ interpreted. By combining models for electron scattering in a solid, two different growth regimes, and electron beam induced heating, the majority of the experimental results were explained qualitatively. This indicates that the physical processes are well understood, although quantitatively speaking the models can still be improved. The review makes clear that several major issues remain. One issue encountered when interpreting results from literature is the lack of data. Often, important parameters ͑such as the local precursor pressure͒ are not reported, which can complicate interpretation of the results. Another issue is the fact that the cross section for electron induced dissociation is unknown. In a number of cases, a correlation between the vertical growth rate and the secondary electron yield was found, which suggests that the secondary electrons dominate the dissociation rather than the primary electrons. Conclusive evidence for this hypothesis has not been found. Finally, there is a limited understanding of the mechanism of electron induced precursor dissociation. In many cases, the deposit composition is not directly dependent on the stoichiometric composition of the precursor and the electron induced decomposition paths can be very different from those expected from calculations or thermal decomposition. The dissociation mechanism is one of the key factors determining the purity of the deposits and a better understanding of this process will help develop electron beam induced deposition into a viable nanofabrication technique.

show abstract

Experimental and computational study of field emission characteristics from amorphous carbon single nanotips grown by carbon contamination - I. Experiments and computation

Cited by 51 publications

References 0 publications

Hydrogen plasma dry etching method for field emission application

Hydrogen plasma dry etching method for field emission application

Field emission properties of vertically aligned iron nanocluster wires grown on a glass substrate

A critical literature review of focused electron beam induced deposition

Contact Info

Product

Resources

About