Experimental and ab initio study of enhanced resistance to amorphization of nanocrystalline silicon carbide under electron irradiation

Jamison, Laura; Zheng, Mingjie; Shannon, Steven; Allen, Todd R.; Morgan, Dane; Szlufarska, Izabela

doi:10.1016/j.jnucmat.2013.11.010

Cited by 49 publications

(53 citation statements)

References 44 publications

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“…As described earlier, NE-SiC shows greater radiation tolerance than bulk SiC under Si ions [15] and electron-beam irradiations [17], as well as under the present study, whereas Kr ion-irradiated NE-SiC exhibits a lower amorphization resistance than bulk SiC [18].…”

Section: Discussionsupporting

confidence: 83%

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Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance

Imada

Ishimaru

Sato

et al. 2015

Journal of Nuclear Materials

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Nano-engineered 3C-SiC thin films, which possess columnar structures with high-density stacking faults and twins, were irradiated with 2 MeV Si ions at cryogenic and room temperatures. From cross-sectional transmission electron microscopy observations in combination with Monte Carlo simulations based on the Stopping and Range of Ions in Matter code, it was found that their amorphization resistance is six times greater than bulk crystalline SiC at room temperature. High-angle bright-field images taken by spherical aberration corrected scanning transmission electron microscopy revealed that the distortion of atomic configurations is localized near the stacking faults. The resultant strain field probably contributes to the enhancement of radiation tolerance of this material.

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Section: Discussionsupporting

confidence: 83%

“…Jamison et al [17] examined structural changes of NE-SiC under electron-beam irradiation using in situ TEM. As a consequence, they found that damage threshold for amorphization is five times higher than single crystalline SiC.…”

Section: Introductionmentioning

confidence: 99%

Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance

Imada

Ishimaru

Sato

et al. 2015

Journal of Nuclear Materials

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“…However, a smaller grain size also may increase the free energy resulting from the increase on the GB density which can favor the path toward an amorphous phase [29]. The microstructure influence of the behavior of SiC under irradiation is controversial as both experimental and computational studies can be found concerning whether grain refinement enhances or reduces SiC radiation resistance [30][31][32][33]. The similar ion-amorphization doses of 6H-SiC, TSA3 and HNS suggest that the microstructure of these fibers is not refined enough to show significant enhanced or reduced radiation resistance -not even for the HNS fibers which grain sizes are around 20 nm.…”

Section: Ion-irradiation-induced Amorphizationmentioning

confidence: 99%

Characterization of the ion-amorphization process and thermal annealing effects on third generation SiC fibers and 6H-SiC

Huguet-Garcia

Jankowiak

Miro

et al. 2015

EPJ Nuclear Sci. Technol.

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Abstract. The objective of the present work is to study the irradiation effects on third generation SiC fibers which fulfill the minimum requisites for nuclear applications, i.e. Hi-Nicalon type S, hereafter HNS, and Tyranno SA3, hereafter TSA3. With this purpose, these fibers have been ion-irradiated with 4 MeV Au ions at room temperature and increasing fluences. Irradiation effects have been characterized in terms of micro-Raman Spectroscopy and Transmission Electron Microscopy and compared to the response of the as-irradiated model material, i.e. 6H-SiC single crystals. It is reported that ion-irradiation induces amorphization in SiC fibers. Ionamorphization kinetics between these fibers and 6H-SiC single crystals are similar despite their different microstructures and polytypes with a critical amorphization dose of ∼3 Â 10 14 cm À2 (∼0.6 dpa) at room temperature. Also, thermally annealing-induced cracking is studied via in situ Environmental Scanning Electron Microscopy. The temperatures at which the first cracks appear as well as the crack density growth rate increase with increasing heating rates. The activation energy of the cracking process yields 1.05 eV in agreement with recrystallization activation energies of ion-amorphized samples.

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“…We have recently examined the threshold dose for amorphization of NE-SiC under 2 MeV Si ion irradiation, and found that NE-SiC is six times more radiation resistant than singlecrystalline SiC at room temperature [13], which is much larger than observed in the present study under Au ion irradiation. Jamison et al [20] examined structural changes of NE-SiC under electron-beam irradiation using in situ TEM, and they found that the critical dose for amorphization damage is five times higher than for SC-SiC. These results suggest that the presence of the highdensities of planar defects in SiC is a useful approach to improve the radiation tolerance.…”

Section: Resultsmentioning

confidence: 99%

Amorphization resistance of nano-engineered SiC under heavy ion irradiation

Imada

Ishimaru

Xue

et al. 2016

Journal of Nuclear Materials

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a b s t r a c tSilicon carbide (SiC) with a high-density of planar defects (hereafter, 'nano-engineered SiC') and epitaxially-grown single-crystalline 3C-SiC were simultaneously irradiated with Au ions at room temperature, in order to compare their relative resistance to radiation-induced amorphization. It was found that the local threshold dose for amorphization is comparable for both samples under 2 MeV Au ion irradiation; whereas, nano-engineered SiC exhibits slightly greater radiation tolerance than single crystalline SiC under 10 MeV Au irradiation. Under 10 MeV Au ion irradiation, the dose for amorphization increased by about a factor of two in both nano-engineered and single crystal SiC due to the local increase in electronic energy loss that enhanced dynamic recovery.

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Experimental and ab initio study of enhanced resistance to amorphization of nanocrystalline silicon carbide under electron irradiation

Cited by 49 publications

References 44 publications

Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance

Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance

Characterization of the ion-amorphization process and thermal annealing effects on third generation SiC fibers and 6H-SiC

Amorphization resistance of nano-engineered SiC under heavy ion irradiation

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