1999
DOI: 10.1109/2944.788446
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Experimental analysis of self-pulsation 650-nm-wavelength AlGaInP laser diodes with epitaxial absorbing layers

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Cited by 6 publications
(2 citation statements)
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“…The pulsation frequency increases above threshold in a linear fashion until selfpulsation ceases. For most of the current range the device operates in a large signal modulation regime 12 where the recovery time of the absorber (carrier lifetime in the absorber quantum well) is much shorter than that in the gain region. In this regime the pulsation frequency is directly related to the rate at which charge carriers can be replenished in the gain quantum wells, and a linear relationship results.…”
Section: Laser Designmentioning
confidence: 99%
“…The pulsation frequency increases above threshold in a linear fashion until selfpulsation ceases. For most of the current range the device operates in a large signal modulation regime 12 where the recovery time of the absorber (carrier lifetime in the absorber quantum well) is much shorter than that in the gain region. In this regime the pulsation frequency is directly related to the rate at which charge carriers can be replenished in the gain quantum wells, and a linear relationship results.…”
Section: Laser Designmentioning
confidence: 99%
“…Self-pulsating semiconductor lasers can generate pulsating oscillations without any external modulations according to their unique device structures. [3][4][5][6] Indeed, self-pulsating lasers are used for digital versatile disk (DVD) systems to reduce optical noises induced by optical feedback from disk surfaces. Although they are aimed to reduce optical feedback noises, noises are sometimes much enhanced under certain conditions of feedback configurations.…”
Section: Introductionmentioning
confidence: 99%