Expediting Photo‐Charging of Semiconductors through a Bipolar Charge Storage Junction for Responsive Dark Photocatalysis

Abstract

Photo‐charging of semiconductors stores electrons for decoupled solar utilization, overcoming intermittent sunlight availability. However, the sluggish photo‐charging process impedes responsive charge storage. Herein, a bipolar charge storage junction is demonstrated to expedite the photo‐charging process within a renowned ionic‐CN/Co3O4 configuration, benefiting from their mismatched photo‐charging kinetics. Rapid photo‐hole storage associated with structural evolution at geometrically dependent Co sites in Co3O4 improves sluggish electron storage for ionic‐CN, while slow recovery of altered [CoO4] and [CoO6] structures delayed electron‐hole recombination. By passivating individual atomic sites, rapid hole storage is attributed to synergistic contributions of tetrahedral Co2⁺ and octahedral Co3⁺ species. The bipolar charge storage junction is photo‐charged at 0.86 A g−1, rivaling the electrical charging rate in ion batteries. With 60 s photo‐charging, the junction yields 0.27 mmol g−1 of “dark” hydrogen, the benchmark for such a short photo‐charging timeframe. This proof‐of‐concept design empowers the fast photo‐charging ability of bipolar charge storage junctions, advancing responsive photo‐charge storage for decoupled solar utilization.