2019
DOI: 10.1103/physrevresearch.1.032010
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Excitons on a microscopic level: The mixed dynamic structure factor

Abstract: The dynamic structure factor of materials is proportional to their linear electronic response and it displays their excitation spectra. Usually the response is measured on the same length scale as the perturbation. Here, we illustrate that much can be gained by studying also the mixed dynamic structure factor, which connects different spatial components of perturbation and response. We extend state-of-the-art ab initio calculations to access the mixed dynamic structure factor, including excitonic effects. Usin… Show more

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Cited by 5 publications
(5 citation statements)
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References 91 publications
(127 reference statements)
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“…excitonic) effects, f abs (ω) also has to account for the band-gap opening from the LDA to the GWA. As also previously found 70,71 , both kernels are strongly frequency dependent. In the low-energy region (before strong oscillations start to develop in correspondence to poles of the response functions), the signs of the two kernels f abs (ω) and f abs,mb (ω) are opposite: they effectively shift the weight of the absorption spectra to larger or smaller energies, respectively.…”
Section: (22)supporting
confidence: 86%
“…excitonic) effects, f abs (ω) also has to account for the band-gap opening from the LDA to the GWA. As also previously found 70,71 , both kernels are strongly frequency dependent. In the low-energy region (before strong oscillations start to develop in correspondence to poles of the response functions), the signs of the two kernels f abs (ω) and f abs,mb (ω) are opposite: they effectively shift the weight of the absorption spectra to larger or smaller energies, respectively.…”
Section: (22)supporting
confidence: 86%
“…For most practical BSE calculations, a widely used treatment is to ignore the frequency dependence of the dielectric function and use ε −1 G,G (q, ω = 0) [4,5,61]. However, the ωdependent dynamic effects of the dielectric screening may have a non-negligible influence on the electron dynamics [62,63], which can be estimated by methods such as generalized plasmon-pole models [64][65][66]. In the present work we use the static approximation throughout and refer to this as the standard BSE approach or simply as the BSE.…”
Section: A Simplifying the Dielectric Screening In The Bsementioning
confidence: 99%
“…Approximations based on the BSE of MBPT have become the state‐of‐the‐art method to calculate the dielectric function of semiconductors and insulators . The BSE is an in‐principle exact Dyson equation for the two‐particle correlation function, from which ϵMfalse(boldq,ωfalse) can be inferred.…”
Section: Calculationsmentioning
confidence: 99%
“…[3,[32][33][34] Approximations based on the BSE of MBPT have become the state-of-the-art method to calculate the dielectric function of semiconductors and insulators. [1][2][3][18][19][20]22,26,35] The BSE is an in-principle exact Dyson equation for the two-particle correlation function, from which ϵ M ðq, ωÞ can be inferred. But in calculations of real materials, approximations have to be invoked.…”
Section: Calculationsmentioning
confidence: 99%