Excitonic States and Related Optical Susceptibility in InN/AlN Quantum Well Under the Effects of the Well Size and Impurity Position

Abstract

Based on the finite difference method, linear optical susceptibility, photoluminescence peak and binding energies of three first states of an exciton trapped by a positive charge donor-impurity ( ) confined in InN/AlN quantum well are investigated in terms of well size and impurity position. The electron, heavy hole free and bound excitons allowed eigen-values and corresponding eigen-functions are obtained numerically by solving one-dimensional time-independent Schrödinger equation. Within the parabolic band and effective mass approximations, the calculations are made considering the coupling of the electron in the n-th conduction subband and the heavy hole in the m-th valence subband under the impacts of the well size and impurity position. The obtained results show clearly that the energy, binding energy and photoluminescence peak energy show a decreasing behavior according to well size for both free and bound cases. Moreover, the optical susceptibility associated to exciton transition is strongly red-shift (blue-shifted) with enhancing the well size (impurity position).