Excitonic Polaritons in Semiconductor Micropillars

Bajoni, Daniele; Wertz, Esther; Senellart, P.; Miard, A.; Semenova, Elizaveta; Lemaı̂tre, A.; Sagnes, I.; Bouchoule, S.; Bloch, J.

doi:10.12693/aphyspola.114.933

Cited by 9 publications

(10 citation statements)

References 35 publications

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“…A polariton laser may be realized in GaAs structures with a high number of quantum wells, which allows reduction of the concentration of excitons per quantum well at the threshold polariton density for stimulated emission. 3 However, recently Bajoni 13 et al have cast some doubt on this approach for GaAs-based structures, in contrast to ref 3: in the regime of stimulated emission under optical excitation they observed a parabolic dispersion from GaAs microcavities with a large number of quantum wells (12)(13)(14)(15), indicating that the stimulated emission occurs in the weak coupling regime. By contrast, there is no doubt that polariton condensation does occur in CdTe microcavities with their larger exciton binding energies and hence greater resistance to screening 2 : such systems could be used for the creation of an electrically pumped polariton laser.…”

Section: (B) Solid)mentioning

confidence: 93%

Electroluminescence emission from polariton states in GaAs-based semiconductor microcavities

Khalifa

Love

Krizhanovskii

et al. 2008

Applied Physics Letters

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The authors report the observation of electroluminescence from GaAs-based semiconductor microcavities in the strong coupling regime. At low current densities the emission consists of two peaks, which exhibit anti-crossing behaviour as a function of detection angle and thus originate from polariton states. With increasing carrier injection we observe a progressive transition from strong to weak coupling due to screening of the exciton resonance by free carriers. The demonstration that polariton emission can be excited by electrical injection is encouraging for future development of polariton lasers.

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Section: (B) Solid)mentioning

confidence: 93%

Electroluminescence emission from polariton states in GaAs-based semiconductor microcavities

Khalifa

Love

Krizhanovskii

et al. 2008

Applied Physics Letters

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“…We also expect parametric effects in between confined states and between confined and extended states, and the observation of coherence transfer between states or coherent effects could be made. 21 As all the measurements shown here were performed under nonresonant excitation, it is possible, thanks to the recent observation of a microcavity light emitting diode, 22 to envision electrical injection. One can therefore already think about optoelectronic applications ͑as a quasithresholdless singlemode laser͒ through its combination with future coherent effects in the polariton traps presented here.…”

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confidence: 99%

Nonlinear relaxation of zero-dimension-trapped microcavity polaritons

Daïf

Nardin

Paraïso

et al. 2008

Applied Physics Letters

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We study the emission properties of confined polariton states in shallow zero-dimensional traps under nonresonant excitation. We evidence several relaxation regimes. For slightly negative photon-exciton detuning, we observe a nonlinear increase of the emission intensity, characteristic of carrier-carrier scattering assisted relaxation under strong-coupling regime. This demonstrates the efficient relaxation toward a confined state of the system. For slightly positive detuning, we observe the transition from strong to weak coupling regime and then to single-mode lasing. © 2008 American Institute of Physics. ͓DOI: 10.1063/1.2885018͔Research on solid semiconductor systems has been motivated during the last 50 years by both applied and basic goals. From a fundamental point of view, solid state systems were expected to show various effects, ranging from the Purcell effect 1 to full quantum confinement. Added to the latter, Bose-Einstein condensation is expected at rather high temperatures. One of the main fields of research in semiconductor physics has therefore been the quest for a possible BoseEintein condensation ͑BEC͒ of excitons, initially proposed by Moskalenko 2 and Blatt et al. 3 in 1962. A clear demonstration of pure excitonic BEC has not been achieved yet, presumably because of several competing effects such as disorder and Auger effect. 4 Present research directions aim at the realization of a trap for excitons. 5 Recently, BEC has been achieved for microcavity polaritons in a CdTe based microcavity, 6 and in GaAs with a trap. 7 Indeed, these quasiparticles have the great advantage over excitons or electrons to exhibit a very light effective mass, thanks to their photon component. BEC was favored by a confinement of the polaritons within small volumes 6 in local defects of the microcavity, an aspect confirmed by theoretical works. 8 The population of the ground state of the system in these defects was favored by Coulomb interaction. This is shown by the presence of a density dependence of the relaxation toward the ground state of the system, before the stimulation characteristic of condensation. It was already observed and predicted in several experimental and theoretical works: before condensing and showing a stimulation of the population of the ground ͑or condensed͒ state of the system, polaritons are expected to relax linearly ͑through phonons͒ and then quadratically through Coulomb interaction 9,10 toward low energy states.At the same time, most breakthroughs in semiconductor physics and technology over the last thirty years originated from quantum confinement of elementary excitations along one, two, or three spatial dimensions 11,12 and from the improvement of their coupling to the electromagnetic field. Indeed, confinement in semiconductor structures allows design and shaping of their electrical and optical properties. Such confinement allows to control the emission properties of matter and can be used for applications in many fields, ranging from optoelectronics to quantum information.We present her...

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“…В качестве таких объектов можно рассматривать, например, одиночные квантовые точки [1,2], либо тонкие слои полупроводниковых структур, размещенные в микрорезонаторе [3]. Экситонные переходы в таких материалах могут активно взаимодействовать с модами резонатора, что приводит к различным интересным явлениям, таким как бозе-конденсация поляритонов [4,5], вакуумное расщепление Раби [1][2][3], формирование поляритоновсвязанных состояний фотонов и экситонов в резонаторе [6][7][8][9][10][11][12][13][14][15][16].…”

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“…Изучение этих и других явлений, возникающих в подобной системе, имеет как фундаментальное, так и прикладное значение. Например, оно привело к работам по созданию нового класса источников когерентного оптического излучения -поляритонных лазеров при комнатной температуре [6][7][8][9][10][11][12][13][14][15][16]. Поляритонный лазер является компактным источником когерентного света без инверсии населенностей.…”

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“…Кроме того, для работы поляритонного лазера необходимо наличие режима сильной связи ( " strong coupling") между полем и излучающими активными центрами в резонаторе. В связи с этим в последние десятилетия обсуждается возможное применение этих лазеров в различных оптических устройствах [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16].…”

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Излучение Резонансной Среды, Возбуждаемое Лазерным Излучением С Периодической Фазовой Модуляцией В Режиме Сильной Связи Поля И Вещества

Архипов¹,

Архипов²,

Egorov³

et al. 2019

Журнал Технической Физики

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Теоретически изучено излучение двухуровневой резонансной среды, размещенной в резонаторе и возбуждаемой импульсом лазерного излучения с периодической модуляцией фазы. Анализ проведен на основе аналитического и численного решений системы уравнений Максвелла-Блоха в условиях, когда реализуется режим сильной связи поля и вещества. В этих условиях данная система аналогична поляритонному лазеру. Показана высокая эффективность возбуждения поляритонного лазера фазово-модулированным импульсом излучения по сравнению с импульсом без фазовой модуляции несущей частоты. Показано, что основной причиной эффективного возбуждения поляритонных мод среды является возникновение разностного комбинационного параметрического резонанса (difference combination parametric resonance). Полученные результаты открывают новые возможности в возбуждении излучения поляритонных лазеров лазерным излучением накачки малой мощности с частотной модуляцией.Ключевые слова: поляритонный лазер, фазовая модуляция, сильная связь, вакуумное расщепление Раби.

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Excitonic Polaritons in Semiconductor Micropillars

Cited by 9 publications

References 35 publications

Electroluminescence emission from polariton states in GaAs-based semiconductor microcavities

Electroluminescence emission from polariton states in GaAs-based semiconductor microcavities

Nonlinear relaxation of zero-dimension-trapped microcavity polaritons

Излучение Резонансной Среды, Возбуждаемое Лазерным Излучением С Периодической Фазовой Модуляцией В Режиме Сильной Связи Поля И Вещества

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