Excitonic devices based on two-dimensional transition metal dichalcogenides van der Waals heterostructures

Interlayer Vibronic Interactions and Phonon Anharmonic Decay in Few-Layer WS2 Nanoflakes

“…where Δω thermal (T) term represents the implicit contribution due to the thermal expansion given by the Gruneisen constant model represented by eq 3: 41,43,44 3) where, γ G is as Gruneisen parameter, γ G = 0.92 (E…”

“…where Δω thermal (T) term represents the implicit contribution due to the thermal expansion given by the Gruneisen constant model represented by eq 3: 41,43,44 3) where, γ G is as Gruneisen parameter, γ G = 0.92 (E 2g 1 ) and γ G = 2.17 (A 1g ), i.e., γ G for bulk WS 2 have been taken here, since the sample consists of few-layer of WS 2 . α corresponds to the thermal expansion coefficient of the material; α = 0.635 × 10 −5 K −1 (E 2g 1 ) and α = 0.326 × 10 −5 K −1 (A 1g ) 45 and η represents the degeneracy; 1 for A 1g mode and 2 for E 2g 1 mode.…”

“…Transition metal dichalcogenides (TMDs) have attracted much research interest in the dynamic field of two-dimensional materials. − Depending on their number of layers, TMDs have configurable electronic characteristics, following a wide range of applications for next-generation devices. Monolayer TMDs, for instance, emerge as an effective material for quantum computers, optoelectronics, and nanoelectronics due to their direct bandgap. − However, in contrast to their monolayer counterparts, few-layer TMDs maintain flexibility due to the presence of interlayer or van der Waals (vdW) interaction among different layers, while providing slightly increased structural robustness.…”