The Earth abundant polycrystalline
antimony selenide (Sb2Se3) thin film is considered
to be a potential photovoltaic
material for their appropriate band gap, higher absorption coefficient,
and nontoxicity. Interband gap defect states play a major role for
efficient solar devices, which depends on the crystallinity of the
materials. In the present investigation, we have synthesized an amorphous
Sb2Se3 thin film by following the thermal evaporation
technique and have also converted the film to crystalline after vacuum
annealing it at 250 °C. Both amorphous and crystalline thin films
were characterized by several
analytical techniques, XRD, FE-SEM, optical absorption, XPS, and UPS
spectroscopy. The interband gap defect density was found to be much
higher in the amorphous thin film as compared to that of the crystalline
one. To understand the charge carrier dynamics of the photoexcited
Sb2Se3 thin film, femtosecond broad-band pump–probe
spectroscopy has been employed at cryogenic temperature (5 K) and
room temperature (300 K). Carrier trapping and recombination dynamics
for both the films were found to be faster at 5 K than at 300 K and
were attributed to higher carrier mobility at high temperatures. Understanding
carrier dynamics of this photovoltaic materials are immensely useful
for designing efficient devices.