Exciton Transfer in Array of Epitaxially Connected Nanocrystals

Reich, K. V.; Shklovskiǐ, B. I.

doi:10.1021/acsnano.6b05846

Cited by 38 publications

(39 citation statements)

References 62 publications

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“…Our calculations found splittings of 4.5 meV for {11 � 00} attachment and 3.8 meV for {112 � 0} attachment. Due to these similar splittings and the predictions of a highly non-linear dependence of the coupling strength on the epitaxial connection area, 112 we believe facet dependent coupling is of secondary importance in materials with similar direction specific charge carrier effective masses.…”

Section: Determining Ideal Attachment Facets For Wurtzite Cdsesupporting

confidence: 57%

Resilient Pathways to Atomic Attachment of Quantum Dot Dimers and Artificial Solids from Faceted CdSe Quantum Dot Building Blocks

et al. 2019

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The goal of this work is to identify favored pathways for preparation of defect resilient attached wurtzite CdX (X = S, Se, Te) nanocrystals. We seek guidelines for oriented attachment of faceted nanocrystals that are most likely to yield pairs of nanocrystals with either few or no electronic defects, or electronic defects that are in and of themselves desirable and stable. Using a combination of in-situ high resolution transmission electron microscopy (HRTEM) and electronic structure calculations, we evaluate the relative merits of atomic attachment of wurtzite CdSe nanocrystals on the {11 � 00} or {112 � 0} family of facets. Pairwise attachment on either facet can lead to perfect interfaces, provided the nanocrystal facets are perfectly flat and the angles between the nanocrystals can adjust during the assembly. Considering defective attachment, we observe for {11 � 00} facet attachment that only one type of edge dislocation forms, creating deep hole traps. For {112 � 0} facet attachment, we observe that four distinct types of dislocations form, some of which lead to deep hole traps while others only to shallow hole traps. HRTEM movies of the dislocation dynamics show that dislocations at {11 � 00} interfaces can be removed, albeit slowly. Whereas only some extended dislocations at {112 � 0} interfaces could be removed, others were trapped at the interface. Based on these insights, we identify the most resilient pathways to atomic attachment of pairs of wurtzite CdX nanocrystals and consider how these insights can translate to creation of electronically useful materials from quantum dots with other crystal structures.

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Section: Determining Ideal Attachment Facets For Wurtzite Cdsesupporting

confidence: 57%

Resilient Pathways to Atomic Attachment of Quantum Dot Dimers and Artificial Solids from Faceted CdSe Quantum Dot Building Blocks

et al. 2019

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“…Это означает, что туннельное расщепление, ответственное за тандемный механизм в такой системе ничтожно мало. Поскольку туннельный матричный элемент, как это следует из работы [7], M ∝ 2t e t h /E c , вклад от такого процесса можно не учитывать (рис. 6).…”

Section: обсуждение результатовunclassified

“…В работе [6] предложен механизм генерации синглетного кислорода за счет одновременного туннелирования электрона и дырки с участием или без участия фононов. Данный механизм аналогичен по своей сути тандемному механизму переноса энергии, рассмотренному в работе [7]. Тем не менее этот механизм не рассматривается в настоящей работе, поскольку, на наш взгляд, он менее эффективен, чем обменное взаимодействие без переноса заряда.…”

Section: Introductionunclassified

Механизм Генерации Синглетного Кислорода На Поверхности Возбужденного Нанопористого Кремния

Самосват¹,

Chikalova-Luzina

Зегря³

2019

Физика И Техника Полупроводников

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A theoretical analysis of the mechanism of generation of singlet oxygen on the surface of photoexcited nanoporous silicon is presented. It is shown that the nonradiative energy transfer from nanoporous silicon to the oxygen molecule by the Dexter exchange mechanism is the basis for the mechanism of singlet oxygen generation. An analytical expression is obtained and a numerical estimate of the probability of energy transfer from nanoporous silicon to an oxygen molecule is given. It was shown that its numerical value ~ (10^3-10^4) s^{-1} agrees quite well with experiment.

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“…В [6] предложен механизм генерации синглетного кислорода за счет одновременного туннелирования электрона и дырки с участием или без участия фононов. Этот механизм аналогичен по своей сути тандем-механизму переноса энергии, рассмотренному в [7]. Тем не менее данный механизм не рассматривается в настоящей работе,…”

unclassified

“…Эти условия реализуются на практике. Учет фононов и механизм, предложенный в работе [7], здесь не рассмотрены.…”

unclassified

Механизм Генерации Синглетного Кислорода В Присутствии Возбужденного Нанопористого Кремния

Самосват¹,

Чикалова-Лузина²,

Хромов³

et al. 2018

Письма В Журнал Технической Физики

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A theoretical analysis of the mechanism of generation of singlet oxygen in the presence of photoexcited nanoporous silicon is presented. It is demonstrated that the mechanism of generation of singlet oxygen is based on nonradiative energy transfer from nanoporous silicon to an oxygen molecule by the exchange mechanism. An analytical expression of the probability of energy transfer from nanoporous silicon to an oxygen molecule is obtained, and a numerical estimate of this process is given. The numerical estimation is of the order of 10^3–10^4 s^–1, a value that agrees rather well with the experiment.

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Exciton Transfer in Array of Epitaxially Connected Nanocrystals

Cited by 38 publications

References 62 publications

Resilient Pathways to Atomic Attachment of Quantum Dot Dimers and Artificial Solids from Faceted CdSe Quantum Dot Building Blocks

Resilient Pathways to Atomic Attachment of Quantum Dot Dimers and Artificial Solids from Faceted CdSe Quantum Dot Building Blocks

Механизм Генерации Синглетного Кислорода На Поверхности Возбужденного Нанопористого Кремния

Механизм Генерации Синглетного Кислорода В Присутствии Возбужденного Нанопористого Кремния

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