Exciton Relaxation in Wide-Gap Complex Oxides

Mürk, V.

doi:10.4028/www.scientific.net/msf.239-241.537

Cited by 18 publications

(13 citation statements)

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“…The high-energy band prevails at low temperatures. Its maximum position varies in various papers from 4.43 eV [8] to 4.68 eV [3], 4.9 eV [4,5,7] and 4.95 eV [6]. At RT a low-energy band is observed.…”

Section: Introductionmentioning

confidence: 99%

“…Defects, responsible for these bands, compete with Ce 3+ in the energy transfer processes and reduce considerably the efficiency of energy transfer from the host lattice to Ce 3+ ions [2]. The luminescence of undoped YAG crystals was studied in numerous papers (see, e.g., [1][2][3][4][5][6][7][8][9][10][11][12][13] and references therein). Under excitation in the exciton absorption region (near 7.0 eV [3,4,8]), the presence of two ultraviolet emission bands was reported.…”

Section: Introductionmentioning

confidence: 99%

“…In the luminescence spectrum of YAG:Ce and LuAG:Ce crystals, besides the Ce 3+ -related intense green and weak ultraviolet bands (see, e.g. [1,2]), additional ultraviolet bands are observed, which are present also in undoped single crystals of YAG [3][4][5][6][7][8][9][10][11][12] and LuAG [2]. Defects, responsible for these bands, compete with Ce 3+ in the energy transfer processes and reduce considerably the efficiency of energy transfer from the host lattice to Ce 3+ ions [2].…”

Section: Introductionmentioning

confidence: 99%

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Luminescence of undoped LuAG and YAG crystals

Babin

Blažek

Krasnikov

et al. 2005

phys. stat. sol. (c)

120

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Emission and excitation spectra and decay kinetics are studied for the luminescence of undoped LuAG and YAG crystals. Two emission bands are located at 4.8 eV and 3.95 eV in YAG and 4.9 eV and 3.65 eV in LuAG, excited in the E exc >6.5 eV energy region. ). The corresponding excitation band, peaking at 6.9 eV in YAG and 7.2 eV in LuAG, is ascribed to the exciton perturbed by the antisite defect. Besides the two slow emissions, the weak fast (ns) emission of the self-trapped exciton, strongly overlapping with the high-energy emission band, is also observed. In Ce 3+ -doped garnets, the presence of the antisite defects results in a considerable decrease of energy transfer efficiency from the host lattice to Ce 3+ ions. The possibilities of improvement of scintillation charactristics of this material are discussed.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Luminescence of undoped LuAG and YAG crystals

Babin

Blažek

Krasnikov

et al. 2005

phys. stat. sol. (c)

120

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“…16 However according to the current measurements, undoped YAG has multiple strong luminescence peaks, not only the 300 nm emission, which has been the focus of all the previous investigations on YAG crystals. [6][7][8][9][10][11][12][13][14][15][16] The UV emission in YAG has been suggested to result from self trapped excitons and antisite defects Y Al 3+ , 16 which have low formation energy as predicted by first principals calculations. 17 We attribute the new observed PL emission bands at 700 and 800 nm to Fe 3+ impurities for the following reasons: 1) Fe 3+ in either tetrahedral or octahedral sites has a broad emission in many materials between 700 nm 1000 nm; 18 and according to EPR studies, 19 Fe ion substitutes for the Al ion at both octahedral and tetrahedral sites in the YAG structure.…”

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confidence: 99%

“…2 The luminescence of undoped YAG crystals has been extensively studied. [8][9][10][11][12][13][14][15] However, most of the measurements have focused on the UV emission and identified it as the main luminescence in the YAG structure and the main defect center that compete with Ce 3+ ion in Ce doped YAG (Ce:YAG) scintillators.…”

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confidence: 99%

Strong visible and near infrared luminescence in undoped YAG single crystals

et al. 2011

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Strong luminescence peaks were observed at 700 and 800 nm in undoped yttrium aluminum garnet (YAG) single crystals. They were attributed to low level of iron impurities as confirmed by Glow Discharge Mass Spectrometry analysis. The 800 nm was only excited by high energy band at 270 nm; the reason behind that was discussed. Photoluminescence measurements revealed a large number of luminescence peaks in all YAG crystals regardless of the growth conditions due to native defects and low-level impurities. These luminescence centers have significant effects on the optical properties of rare-earth doped YAG crystals and their performance in laser and scintillation applications. Excitons released in the lattice may be easily captured by iron ions instead of Ce3+ ions and the scintillation output is substantially decreased. Nevertheless, Undoped YAG crystals may have the potential to be developed into efficient scintillators

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The Blue Laser Diode

Nakamura¹,

Fasol²

1997

2,397

965

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play a mayor role in InN deposition. The results show that it is possible to design organometallic compounds to produce large quantities of molecular H y InN x as growth species for indium nitride layers. Further work is needed in order to suppress the formation of In atoms in these conditions. In order to achieve this we are working on improved precursors, such as (N 3 ) 2 InR (R = suitable organic stabilizing group) containing more active nitrogen in the form of the azide group (N 3 ).

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Exciton Relaxation in Wide-Gap Complex Oxides

Cited by 18 publications

References 0 publications

Luminescence of undoped LuAG and YAG crystals

Luminescence of undoped LuAG and YAG crystals

Strong visible and near infrared luminescence in undoped YAG single crystals

The Blue Laser Diode

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