2013
DOI: 10.1016/j.physb.2012.10.008
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Exciton-related nonlinear optical absorption and refractive index change in GaAs–Ga1−xAlxAs double quantum wells

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Cited by 19 publications
(4 citation statements)
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“…For example, there are several papers (see e.g. [26,47,[71][72][73][74][75]) dedicated to analyzing the optical behavior of quantum dots by calculating the absorption coefficient, 𝜁, and the relative changes at the same order of the refractive index, ∆𝑛∕𝑛, for an incident linearly polarized light beam. For a transition (𝓀 𝑖 , 𝓁 𝑖 , 𝓃 𝑖 ) → (𝓀 𝑗 , 𝓁 𝑗 , 𝓃 𝑗 ), we can compute such quantities (at first order for simplicity) as functions of the energy 𝐸 𝛾 of the incident photon [26] by using a density matrix approach and a perturbation expansion method [76] Here, 𝜇 0 is the permeability of the vacuum, 𝜀 = 𝜀 0 𝑛 2 𝑟 = 𝜀 0 𝜀 𝑟 is the real part of the permittivity of the material (𝜀 0 is the permittivity of the vacuum, 𝜀 𝑟 is the static dielectric constant of the material and 𝑛 𝑟 = √ 𝜀 𝑟 is the refractive index of the medium), 𝜎 𝑣 is the carrier density, Γ 𝑖𝑗 = ℏ∕𝑇 𝑖𝑗 is the relaxation rate-is a damping-related Lorentzian term associated with exciton scattering losses in the system [73]-(𝑇 𝑖𝑗 is the time relaxation), ℳ 𝑎;𝑖𝑗 ≡ ⟨Ψ 𝑎;𝓀 𝑗 ,𝓁 𝑗 ,𝓃 𝑗 |𝑒𝑥| Ψ 𝑎;𝓀 𝑖 ,𝓁 𝑖 ,𝓃 𝑖 ⟩ is the dipole matrix element for 𝑥-polarized incident radiation (𝑒 is the elementary charge) and ∆𝐸 𝑎;𝑖𝑗 ≡ 𝐸 𝑎;𝓀 𝑗 ,𝓁 𝑗 ,𝓃 𝑗 − 𝐸 𝑎;𝓀 𝑖 ,𝓁 𝑖 ,𝓃 𝑖 is the energy gap between the levels.…”
Section: Conclusion and Final Remarksmentioning
confidence: 99%
“…For example, there are several papers (see e.g. [26,47,[71][72][73][74][75]) dedicated to analyzing the optical behavior of quantum dots by calculating the absorption coefficient, 𝜁, and the relative changes at the same order of the refractive index, ∆𝑛∕𝑛, for an incident linearly polarized light beam. For a transition (𝓀 𝑖 , 𝓁 𝑖 , 𝓃 𝑖 ) → (𝓀 𝑗 , 𝓁 𝑗 , 𝓃 𝑗 ), we can compute such quantities (at first order for simplicity) as functions of the energy 𝐸 𝛾 of the incident photon [26] by using a density matrix approach and a perturbation expansion method [76] Here, 𝜇 0 is the permeability of the vacuum, 𝜀 = 𝜀 0 𝑛 2 𝑟 = 𝜀 0 𝜀 𝑟 is the real part of the permittivity of the material (𝜀 0 is the permittivity of the vacuum, 𝜀 𝑟 is the static dielectric constant of the material and 𝑛 𝑟 = √ 𝜀 𝑟 is the refractive index of the medium), 𝜎 𝑣 is the carrier density, Γ 𝑖𝑗 = ℏ∕𝑇 𝑖𝑗 is the relaxation rate-is a damping-related Lorentzian term associated with exciton scattering losses in the system [73]-(𝑇 𝑖𝑗 is the time relaxation), ℳ 𝑎;𝑖𝑗 ≡ ⟨Ψ 𝑎;𝓀 𝑗 ,𝓁 𝑗 ,𝓃 𝑗 |𝑒𝑥| Ψ 𝑎;𝓀 𝑖 ,𝓁 𝑖 ,𝓃 𝑖 ⟩ is the dipole matrix element for 𝑥-polarized incident radiation (𝑒 is the elementary charge) and ∆𝐸 𝑎;𝑖𝑗 ≡ 𝐸 𝑎;𝓀 𝑗 ,𝓁 𝑗 ,𝓃 𝑗 − 𝐸 𝑎;𝓀 𝑖 ,𝓁 𝑖 ,𝓃 𝑖 is the energy gap between the levels.…”
Section: Conclusion and Final Remarksmentioning
confidence: 99%
“…where ω is the frequency of an incident photon, µ the permeability of vacuum. Dipole matrix element M j j can be written as the following expression [29] M j j = ψ j |q(z e − z h )|ψ j .…”
Section: Theory and Modelmentioning
confidence: 99%
“…Within the framework of the effective mass approximation, the Hamiltonian for exciton states in a InxGa1xN/GaN QW under the effects of growth‐direction applied electric field (trueF=Fthinmathspacetrueuzˆ) and hydrostatic pressure is given by rightHcenter=lefti=normale,h[]thinmathspace22thinmathspacemi*false(Pfalse)thinmathspace2thinmathspacezi2-0.16667em+Vifalse(zi,Pfalse)rightcenterleft22μ(P)()2ρ2+1ρρ+1ρ22ϕ2rightcenterleft+eF(znormaleznormalh)e2ϵ(P)r, where r=ρ2+false(zezh)2 is the electron–hole distance, ρ is the in‐plane electron–hole relative coordinate, and ze (zh) is the positions of the electron (hole) along the z ‐direction. In addition, …”
Section: Theoretical Frameworkmentioning
confidence: 99%