Exciton–polaritons of hBN/WS2 heterostructure in cavity observed at room temperature

Abstract

The layer-by-layer buildup of a two-dimensional transition metal dichalcogenide monolayer to form a stack is an important development for these materials, which performs many remarkable properties in the light–matter interaction. Herein, we find clear evidence of exciton–polaritons emerging from WS2/hBN/WS2 heterostructures embedded in a dielectric microcavity under optical pumping. A large Rabi splitting of 15 meV is observed at room temperature, which increases to 25 meV at 5 K. An all-dielectric Fabry–Pérot microcavity provides a simple but effective way to study the room temperature strong coupling between cavity photons and excitons. Our results pave the way for room-temperature polaritonic devices based on quantum-well van der Waals heterostructures.

法布里-珀罗光学微腔及其应用

“…12 Schematic of structure of monolayer WS 2 embedded in a microcavity and it's measurement results [89] . 13 Schematic of structure of WS 2 /hBN/WS 2 heterostructure embedded in a microcavity and it's measurement results [97] . 14 Schematic of structure of monolayer WS 2 embedded in microcavity and it's measurement results [105] .…”

High Quality Near‐Infrared Single‐Mode Lasing from γ‐InSe Using a Transferrable Planar Microcavity

“…The high Q-factors lasing device enable a long coherence length, determining their performance in physics and engineering applications such as high-resolution laser spectroscopy, [19] quantum processing, [20] and coherent sensing, [21] et al In order to obtain high Q-factors single-mode NIR lasing device based on 𝛾-InSe, more research needs to be explored. The single-mode lasing can be obtained by using artificial microcavities, for instance distributed Bragg reflectors (DBRs) microcavity, [22] photonic crystal microcavity [23,24] and super Tamm (ST) mode structure, [25] et al The ST mode structure is obtained by replacing the bottom DBR to Au/SiO 2 thin film, which greatly reduces the effective cavity length (≈50%) and also has a higher Q than convent Tamm plasmons mode structure (without SiO 2 spacer layer). [26,27] However, the lasing devices based on vdW layered materials prepared by direct deposition of DBR formed planar microcavity or ST mode structure usually have low Q-factors due to huge strain, impurity, and defects in deposition process.…”

“…In order to obtain high Q‐factors single‐mode NIR lasing device based on γ‐InSe, more research needs to be explored. The single‐mode lasing can be obtained by using artificial microcavities, for instance distributed Bragg reflectors (DBRs) microcavity, [ 22 ] photonic crystal microcavity [ 23,24 ] and super Tamm (ST) mode structure, [ 25 ] et al. The ST mode structure is obtained by replacing the bottom DBR to Au/SiO 2 thin film, which greatly reduces the effective cavity length (≈50%) and also has a higher Q than convent Tamm plasmons mode structure (without SiO 2 spacer layer).…”