Exciton-Phonon Interaction in the Spherical Nanoheterosystem CdS/?-HgS/H2O

Tkach, N. V.; Holovatsky, V. A.; Voіtseкhіvsкa, О. М.; Mikhalyova, M.

doi:10.1002/1521-3951(199710)203:2<373::aid-pssb373>3.0.co;2-s

Cited by 38 publications

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“…The main attention of experimental and theoretical studies was concentrated on single quantum wells, wires and dots. But in the last years there appeared papers where electron-phonon or exciton-phonon interactions in multiple quantum wells (MQW) [6], complicated cylindrical wires [11] and complicated spherical QDs [16][17][18][19] were observed.…”

Section: Introductionmentioning

confidence: 88%

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Electron-Phonon Interaction in Semiconductor Spherical Quantum Dot Embedded in a Semiconductor Medium (HgS/CdS)

Tkach

Holovatsky

Voіtseкhіvsкa

et al. 2001

phys. stat. sol. (b)

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Subject classification: 63.22.+m; 73.21.La; S8.11 Different types of electron (hole) ground energy level renormalization due to confined (L) and interface (I) phonons in a spherical quantum dot embedded in a semiconductor medium are investigated on the example of b-HgS/CdS nanoheterosystem. It is shown that for all QD sizes the shift of the ground energy level (D) is generally caused by the interaction of electron and confined phonons of the dot (L 0 ) and of the medium (L 1 ). The contribution of interface phonons (I + , I --) to the magnitude D is comparable with the contribution of L-phonons only at small QD radii (it is three times smaller). For all QD radii the interaction with all phonons through all states of the continuous spectrum gives a one order smaller contribution to D than the interaction through the states of the discrete spectrum. When the QD radius increases the I-phonon contribution decreases and the L-phonon one increases, consequently, the total shift becomes closer to its magnitude in bulk HgS crystal.

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Section: Introductionmentioning

confidence: 88%

“…Electron or exciton-phonon interaction was studied in detail on examples of semiconductor QDs of different shapes embedded in a dielectric medium [15][16][17][18][19]. The calculation of charged or neutral quasiparticle spectra renormalized due to phonons, appeared to be rather complicated even for simplest heterosystems.…”

Section: Introductionmentioning

confidence: 99%

Electron-Phonon Interaction in Semiconductor Spherical Quantum Dot Embedded in a Semiconductor Medium (HgS/CdS)

Tkach

Holovatsky

Voіtseкhіvsкa

et al. 2001

phys. stat. sol. (b)

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“…Such structures as multiple quantum rings [8], complex quantum wires [9,10] and the quantum dot quantum well (QDQW) structures The spectra of quasi-particles in QDQWs and inuence of geometric parameters and doped impurities is to be studied in detail in order to assure that the white light sources can be produced on their base. The pioneer theoretical and experimental investigations of multilayered spherical nanostructures were performed in [16,17]. The results of calculations of interband transitions energies obtained within the eective mass approximation correlated well with the experimental data even when the size of the certain layer of nanostructure was 12 lattice constants.…”

Section: Introductionmentioning

confidence: 99%

Oscillator Strengths of Quantum Transitions in Spherical Quantum Dot GaAs/Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs with On-Center Donor Impurity

2014

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The investigation of the electron and hole energies and probability densities is performed for the cases with and without the donor hydrogenic impurity placed into the centre of quantum dot quantum well structures with dierent thicknesses of layers. The oscillator strengths of intra-and interband quantum transitions in GaAs/AlxGa1−xAs core/shell/well/shell spherical quantum dot with ionized on-center donor impurity are estimated. The oscillator strengths of quantum transitions non-monotonously depend on the width of the layers due to the dierent location of carriers. The optimal geometrical parameters of the nanostructure are estimated for the possibility of multicolor light emission based on interband quantum transitions.

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“…We performed our calculations in very well known and widely used EMA approximation [7][8][9][10]. Parameters for the calculation in EMA are effective masses of materials in the structure and conduction and valence offsets between materials.…”

Section: Introductionmentioning

confidence: 99%

Quasistationary Electron States for CdTe/ZnTe/CdTe Open Spherical Quantum Dots

Stojanović

Kostić

2010

Acta Phys. Pol. A

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The energy spectra of an electron in open spherical quantum dot (QD) within the effective mass approximation (EMA) and rectangular potential model is presented. Energy structure of quantum dots is important because of their possible applications in electronic and optoelectronic devices. For proper description and interpretation of tunneling processes knowledge of resonant states of quantum dots is necessary. Energy values depend on parameter like size of system and spatial composition. The lifetimes of the quasistationary states are computed within the framework of the scattering S-matrix method. It is shown how core radius and barrier thickness for the CdTe/ZnTe/CdTe example influence electron states and their lifetimes.

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Exciton-Phonon Interaction in the Spherical Nanoheterosystem CdS/?-HgS/H2O

Cited by 38 publications

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Electron-Phonon Interaction in Semiconductor Spherical Quantum Dot Embedded in a Semiconductor Medium (HgS/CdS)

Electron-Phonon Interaction in Semiconductor Spherical Quantum Dot Embedded in a Semiconductor Medium (HgS/CdS)

Oscillator Strengths of Quantum Transitions in Spherical Quantum Dot GaAs/Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs with On-Center Donor Impurity

Quasistationary Electron States for CdTe/ZnTe/CdTe Open Spherical Quantum Dots

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Exciton-Phonon Interaction in the Spherical Nanoheterosystem CdS/?-HgS/H2O

Cited by 38 publications

References 0 publications

Electron-Phonon Interaction in Semiconductor Spherical Quantum Dot Embedded in a Semiconductor Medium (HgS/CdS)

Electron-Phonon Interaction in Semiconductor Spherical Quantum Dot Embedded in a Semiconductor Medium (HgS/CdS)

Oscillator Strengths of Quantum Transitions in Spherical Quantum Dot GaAs/AlxGa1-xAs/GaAs/AlxGa1-xAs with On-Center Donor Impurity

Quasistationary Electron States for CdTe/ZnTe/CdTe Open Spherical Quantum Dots

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Product

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Oscillator Strengths of Quantum Transitions in Spherical Quantum Dot GaAs/Al_xGa_1-xAs/GaAs/Al_xGa_1-xAs with On-Center Donor Impurity