Exciton-exciton and exciton–charge carrier interaction and exciton collisional broadening in GaAs/AlGaAs quantum wells

Gribakin, B. F.; Khramtsov, E. S.; Трифонов, А. В.; Ignatiev, I. V.

doi:10.1103/physrevb.104.205302

Cited by 8 publications

(6 citation statements)

References 54 publications

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“…Moreover, the presence of macroscopic EIS is improbable in strongly inhomogeneously broadened systems as the one under study, where energy fluctuations effectively transform EIS to EID. Here, the energy spectrum of interacting excitons becomes continuous due to the averaging of excitation-induced shifts in disordered systems or due to a large number of interacting excitons. ,, Within the model presented below, we introduce effective two-exciton states that correspond to excitons probed in a local environment that depends on the excitation level. In this approach, we also cover potential exciton-carrier interactions, where EID arises due to the scattering of excitons by photoexcited carriers.…”

Section: Resultsmentioning

confidence: 99%

“…The exchange interaction responsible for the spin-dependent part of EID is similar for both exciton−exciton and exciton-carrier interaction. 11,12 Before we present the primary model, we briefly comment on a well-established phenomenological approach to consider excitation-induced nonlinearities where the optical Bloch equations are expanded by a population-dependent decoherence rate Γ 2 → Γ 2 + αn X . 10 Here, the interaction constant α measures the increase of the line width with increasing exciton density n X .…”

Section: Acs Photonicsmentioning

confidence: 99%

“…The transient properties of the exciton resonance upon photoexcitation represent a sensitive probe for Coulomb interactions in semiconductors. In this context, extensive studies were performed in conventional semiconductors such as GaAs and quantum well heterostructures using transient pump–probe , and four-wave mixing (FWM) spectroscopy, where the important role of exciton–exciton interactions is demonstrated. , The broadening of the homogeneous line width Γ 2 with the increase of exciton density n X was attributed to excitation-induced dephasing (EID). Broadenings by about 100 μeV were observed at n X ≈ 10 15 cm –3 in bulk GaAs and 10 16 cm –3 in ZnSe .…”

Section: Introductionmentioning

confidence: 99%

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Spin-Dependent Exciton–Exciton Interactions in a Mixed Lead Halide Perovskite Crystal

Grisard,

Trifonov,

Hahn

et al. 2024

ACS Photonics

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We investigate the two-pulse photon echo response of excitons in the mixed lead halide perovskite crystal FA0.9Cs0.1PbI2.8Br0.2 in dependence on the excitation intensity and polarization of the incident laser pulses. Using spectrally narrow picosecond laser pulses, we address localized excitons with long coherence times T 2 ≈ 100 ps. This approach offers high sensitivity for the observation of excitation-induced changes in the homogeneous line width Γ2 = 2ℏ/T 2 on the μeV scale. Through intensity-dependent measurements, we evaluate the increase of Γ2 by 10 μeV at an exciton density of 1017 cm–3 being comparable with the intrinsic line width of 14 μeV. We observe that the decay of the photon echo and its power dependence are sensitive to the polarization configuration of the excitation pulses, which indicates that spin-dependent exciton–exciton interactions contribute to excitation-induced dephasing. In cross-linear polarization, the decay is faster and its dependence on exciton density is stronger as compared to the copolarized configuration. Using a two-exciton model accounting for different spin configurations we are able to reproduce the experimental results.

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Section: Resultsmentioning

confidence: 99%

Section: Acs Photonicsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Spin-Dependent Exciton–Exciton Interactions in a Mixed Lead Halide Perovskite Crystal

Grisard,

Trifonov,

Hahn

et al. 2024

ACS Photonics

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“…This latter effect can be interpreted as a homogeneous broadening induced by exciton-exciton collisions. It is expected to increase linearly with IX density [30,58,59]:…”

Section: Spectral Broadening Of IX Emission Induced By Surface Patter...mentioning

confidence: 99%

Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layer graphene and nickel/gold films

Aristegui,

Lefebvre,

Brimont

et al. 2023

Phys. Rev. B

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HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

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“…It is expected to increase at E IX > E 0 , and eventually to take over the inhomogeneous contribution. This is due to collisional broadening, which increases linearly with IX density 40,60,61 :…”

Section: B Density-dependence Of the IX Linewidthmentioning

confidence: 99%

Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells

et al. 2022

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A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in electrostatic traps imprinted in the quantum well plane by a thin metal layer deposited on top of the heterostructure. By jointly measuring spatially-resolved photoluminescence and photo-induced current, we demonstrate that exciton density in the trap can be controlled via an external electric bias, which is capable of altering the trap depth. Application of a negative bias deepens the trapping potential, but does not lead to any additional accumulation of excitons in the trap. This is due to exciton dissociation instigated by the lateral electric field at the electrode edges. The resulting carrier losses are detected as an increased photo-current and reduced photoluminescence intensity. By contrast, application of a positive bias washes out the electrode-induced trapping potential. Thus, excitons get released from the trap and recover free propagation in the plane that we reveal by spatially-resolved photoluminescence.

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Exciton-exciton and exciton–charge carrier interaction and exciton collisional broadening in GaAs/AlGaAs quantum wells

Cited by 8 publications

References 54 publications

Spin-Dependent Exciton–Exciton Interactions in a Mixed Lead Halide Perovskite Crystal

Spin-Dependent Exciton–Exciton Interactions in a Mixed Lead Halide Perovskite Crystal

Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layer graphene and nickel/gold films

Effect of electric bias on trapping and release of excitons in GaN/(Al,Ga)N quantum wells

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