Exciton Dynamics and Gain Mechanisms in Optically Pumped ZnSe‐Based Laser Structures

Gutowski, J.; Diessel, A.; Neukirch, U.; Weckendrup, D.; Behr, T.; Jobst, B.; Hommel, D.

doi:10.1002/pssb.2221870222

Cited by 16 publications

References 13 publications

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Optically-Pumped Lasing of Doped ZnSe Epitaxial Layers Grown by Metal-Organic Vapour-Phase Epitaxy

Yablonskii¹,

Gurskii²,

Луценко³

et al. 1997

phys. stat. sol. (a)

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Laser action in undoped, nitrogen and chlorine doped ZnSe epitaxial layer has been achieved and investigated at pulse optical excitation by N2 laser radiation with a frequency of 1000 Hz from liquid nitrogen temperature up to near room temperature at 270 K. The highest value of ZnSe laser energy and power were E = 5×10−8 J and P = 5 W at Iexc = 800 kW/cm2. The laser line positions in doped samples ZnSe:Cl λ = 450.7 nm) and ZnSe:N λ = 451.2, 451.5, 452.0 and 455.5 nm at different excitation intensities) are shifted to the high wavelength side compared to undoped ZnSe λ = 449.8 nm). It was shown that doping ZnSe with both acceptor or donor impurities as well as using a ZnMgSSe barrier layer between the ZnSe layer and the substrate is favourable to increase PL efficiency and to decrease the laser threshold. The lowest threshold value (130 to 150 kW/cm2) was achieved in ZnSe:N grown with hydrogen carrier gas. The results obtained from measurements of the laser line positions as well as from the evaluation of the nonequilibrium carrier concentration proves that the ZnSe lasing mechanism under excitation by the N2 laser radiation is the recombination in an EHP. We found that under high excitation intensity a degradation of the excited region of the ZnSe takes place causing a decrease of the emission intensity. Under lower excitation power the PL intensity enhances during the course of irradiation.

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Optically-Pumped Lasing of Doped ZnSe Epitaxial Layers Grown by Metal-Organic Vapour-Phase Epitaxy

Yablonskii¹,

Gurskii²,

Луценко³

et al. 1997

phys. stat. sol. (a)

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Excitonic nonlinearities and gain processes in binary and ternary ZnSe‐based quantum well structures

Lowisch

Kreller

Puls

et al. 1995

Physica Status Solidi (b)

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The nonlinear optical properties of MQW structures with binary (ZnSe/ZnMnSe) and ternary (ZnCdSe/ZnSe) wells grown by MBE are compared. Pump-probe experiments and high-excitation PL measurements are carried out to study the excitonic nonlinearity as well as gain processes. It is found that the nonlinear optical response is qualitatively different in these two structures as a result of the different kinds of disorder present in the QWs. General Sample PropertiesZnSe-based quantum structures are promising candidates for photonic devices operating in the blue-green spectral range. However, a debate is currently running about the physical processes giving rise to lasing and optical nonlinearity. This paper compares the nonlinear optical properties of multiple quantum well (MQW) structures with binary (ZnSe/ZnMnSe) and ternary (ZnCdSe/ZnSe) wells. The MQW structures, grown on (001) GaAs by MBE, are of excellent quality and exhibit distinct and sharp excitonic features. They are of type I and both electrons and holes are well confined to the QWs. For transmission experiments the GaAs substrate and the ZnSe buffer layer were removed using a selective wet etching technique. The etched samples are fixed on a glass plate by adhesion.The binary ZnSe-QW of the Mn structures is under tensile in-plane strain so that the band edge is shifted to lower energies and the light-hole exciton (&h) is the ground state. Conversely, compressive strain arises in the ternary wells of the Cd structures and the heavy-hole exciton (Xhh) is the lowest electronic excitation. Furthermore, alloy fluctuations occur here in the QW and are thus expected to have a larger influence on the linear as well as nonlinear optical response than for the Mn structures. The samples of the present study were designed to contain five wells of a width that is close to the ZnSe bulk exciton radius of 4.5 nm. Pump-Probe ExperimentsThe excitonic nonlinearities are studied by pump-probe experiments using amplified tunable sub-ps-pulses. The third harmonic of a mode-locked Nd-YLF laser is used as the pump source for a synchronously pumped dye laser containing a saturable absorber for pulse shortening. Output pulses with a typical width of 0.8 ps and a repetition rate of 76 MHz are generated. Pulse selection and amplification is achieved by a four-stage excimer pumped dye amplifier. The amplifier output is used to excite the sample as well as to generate a ')

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(Cd,Zn)Se quantum wells

Kalt

Landolt-Börnstein - Group III Condensed Matter

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Exciton Dynamics and Gain Mechanisms in Optically Pumped ZnSe‐Based Laser Structures

Cited by 16 publications

References 13 publications

Optically-Pumped Lasing of Doped ZnSe Epitaxial Layers Grown by Metal-Organic Vapour-Phase Epitaxy

Optically-Pumped Lasing of Doped ZnSe Epitaxial Layers Grown by Metal-Organic Vapour-Phase Epitaxy

Excitonic nonlinearities and gain processes in binary and ternary ZnSe‐based quantum well structures

(Cd,Zn)Se quantum wells

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