Exciton coherence in clean single InP/InAsP/InP nanowire quantum dots emitting in infra-red measured by Fourier spectroscopy

Sasakura, H.; Kumano, H.; Suemune, I.; Motohisa, Junichi; Kobayashi, Yasunori; Kouwen, M. van; Tomioka, Katsuhiro; Fukui, Takashi; Akopian, N.; Zwiller, Valéry

doi:10.1088/1742-6596/193/1/012132

Cited by 11 publications

(8 citation statements)

References 26 publications

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“…Note that the power of the 2.33-eV laser (I) is sufficiently low so as not to allow observation of any PL emission, which suggests that the created carriers are almost entirely used for the screening of the internal electric field induced by the dipoles at the wurtzite and zinc-blende heterointerfaces 25 in the InP NW. Although InP NWs with a wurtzite crystal structure grown on InP (111)A substrate show type II optical transitions with lifetimes of the order of 100 ns, 26,27 the decay time constant of the specific InP NWs presented in this paper is as short as ∼13 ns 28 (not shown). This indicates that this type of InP NW exhibits a mixed wurtzite and zinc-blende crystal structure.…”

Section: Sample Preparation and Measurement Setupmentioning

confidence: 74%

Longitudinal and transverse exciton-spin relaxation in a single InAsP quantum dot embedded inside a standing InP nanowire using photoluminescence spectroscopy

et al. 2012

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We have investigated the optical properties of a single InAsP quantum dot embedded in a standing InP nanowire. Elongation of the transverse exciton-spin relaxation time of the exciton state with decreasing excitation power was observed by first-order photon correlation measurements. This behavior is well explained by the motional narrowing mechanism induced by Gaussian fluctuations of environmental charges in the nanowire. The longitudinal exciton-spin relaxation time is evaluated by the degree of the random polarization of emission originating from exciton states confined in a single-nanowire quantum dot by using Mueller calculus based on Stokes parameters representation. The reduction in the random polarization component with decreasing excitation power is caused by suppression of the exchange interaction of electron and hole due to an optically induced internal electric field by the dipoles at the wurtzite and zinc-blende heterointerfaces in the InP nanowire.

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Section: Sample Preparation and Measurement Setupmentioning

confidence: 74%

Longitudinal and transverse exciton-spin relaxation in a single InAsP quantum dot embedded inside a standing InP nanowire using photoluminescence spectroscopy

et al. 2012

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“…Indeed, recent experiments indicate that InAs/InP QDs do not have significant FSS. 50 However, the optical properties of InAs/InP QDs has not yet been systematically studied. In this work, we present a comprehensive study of the optical properties of InAs/InP QDs using an atomistic empirical pseudopotential method and the configuration interaction (CI) treatment of the many-particle effects.…”

Section: Introductionmentioning

confidence: 99%

Atomistic pseudopotential theory of optical properties of exciton complexes in InAs/InP quantum dots

Gong

Zhang

Guo

et al. 2011

Applied Physics Letters

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We present a comprehensive study of the optical properties of InAs/InP self-assembled quantum dots (QDs) using an empirical pseudopotential method and configuration interaction treatment of the many-particle effects. The results are compared to those of InAs/GaAs QDs. The main results are: (i) The alignment of emission lines of neutral exciton, charged exciton and biexciton in InAs/InP QDs is quite different from that in InAs/GaAs QDs. (ii) The hidden correlation in InAs/InP QDs is 0.7 -0.9 meV, smaller than that in InAs/GaAs QDs. (iii) The radiative lifetimes of neutral exciton, charged exciton and biexciton in InAs/InP QDs are about twice longer than those in InAs/GaAs QDs. (v) The phase diagrams of few electrons and holes in InAs/InP QDs differ greatly from those in InAs/GaAs QDs. The filling orders of electrons and holes are shown to obey the Hund's rule and Aufbau principle, and therefore the photoluminescence spectra of highly charged excitons are very different from those of InAs/GaAs QDs.

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“…Nevertheless, the emission energy is reasonably controlled by R V , and larger R V resulted in the emission at the higher energy level. Excitonic and biexcitonic from QDs have been confirmed between 1.02 eV [17] from 1.45 eV at present. Binding energy of biexciton is both positive and negative, which seems to be correlated with emission energy; it is positive for smaller emission energy, and large and negative for higher energy.…”

Section: Optical Properties Of Qds In Nwsmentioning

confidence: 50%

Selective-area MOVPE growth and optical properties of single InAsP quantum dots embedded in InP NWs

Kobayashi

Motohisa

Tomioka

et al. 2010

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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We grew InAsP and InP/InAsP/InP heterostructure NWs (NWs) by selective-area MOVPE and carried out microphotoluminescence (µ-PL) measurement. We investigated growth conditions for InAsP NWs and that embedded in InP NWs, and obtained exciton and biexciton emissions from InAsP QDs at optimized growth conditions. Negative binding energy of biexciton was observed due to the strong Coulomb interaction between the holes in the QDs.

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Exciton coherence in clean single InP/InAsP/InP nanowire quantum dots emitting in infra-red measured by Fourier spectroscopy

Cited by 11 publications

References 26 publications

Longitudinal and transverse exciton-spin relaxation in a single InAsP quantum dot embedded inside a standing InP nanowire using photoluminescence spectroscopy

Longitudinal and transverse exciton-spin relaxation in a single InAsP quantum dot embedded inside a standing InP nanowire using photoluminescence spectroscopy

Atomistic pseudopotential theory of optical properties of exciton complexes in InAs/InP quantum dots

Selective-area MOVPE growth and optical properties of single InAsP quantum dots embedded in InP NWs

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