Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride

Cassabois, Guillaume; Fugallo, Giorgia; Elias, Christine; Valvin, Pierre; Rousseau, Adrien; Gil, Bernard; Summerfield, Alex; Mellor, Christopher J.; Cheng, T.S.; Eaves, L.; Foxon, C. T.; Beton, Peter H.; Lazzeri, Michele; Segura, A.; Новиков, С. В.

doi:10.1103/physrevx.12.011057

Cited by 11 publications

(16 citation statements)

References 68 publications

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“…Due to the direct-bandgap nature, the emission and reflectivity spectra are fully different in monolayer h-BN. [45,49] Elias et al investigated that there is no phonon emission between reflectance and PL in monolayer h-BN, whereas the PL spectrum of bulk h-BN shows the phonon-assisted emissions, which substantiate a direct-gap nature of monolayer of h-BN (Figure 3d). In addition, Utilizing complementary experiments using spatially resolved PL imaging in this spectral domain for exfoliated monolayer and adjacent few-layer h-BN, the direct-toindirect-bandgap cross-over has also been investigated.…”

Section: Optical Properties Of H-bn With Number Of Layersmentioning

confidence: 82%

“…Due to the direct‐bandgap nature, the emission and reflectivity spectra are fully different in monolayer h‐BN. [ 45,49 ] Elias et al. investigated that there is no phonon emission between reflectance and PL in monolayer h‐BN, whereas the PL spectrum of bulk h‐BN shows the phonon‐assisted emissions, which substantiate a direct‐gap nature of monolayer of h‐BN (Figure 3d).…”

Section: Properties Of H‐bnmentioning

confidence: 85%

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Hexagonal Boron Nitride for Next‐Generation Photonics and Electronics

et al. 2022

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Hexagonal boron nitride (h-BN), a member of 2D materials, has an analogous crystal structure to graphene, yet, is an insulator having an indirect bandgap of ≈6 eV. [16] h-BN has been explored as the "ideal" substrate and excellent encapsulant [17] for other 2D materials including graphene and transition metal dichalcogenides (TMDs) due to its excellent insulating property, atomically flat surface free of dangling bonds, [18] and charged impurities, and high thermal conductivity. [19,20] Encapsulating other 2D materials with h-BN effectively protects them from local electrical and chemical environment, enabling them to manifest their theoretically expected "intrinsic" properties. In addition, h-BN has been utilized as passive components in 2D vdW electronic devices, such as gate dielectrics and tunneling barriers.Recently, h-BN is attracting intensive research interests, motivated by the variety of outstanding properties, it shows across the fields of quantum optics, [21] electronics, and optoelectronics. [22] For example, despite its indirect-bandgap nature, h-BN showed deep-ultraviolet (DUV) emission with exceptionally high internal quantum efficiency (IQE) comparable to or even higher than single-crystalline direct-bandgap semiconductors. Defects in h-BN are efficient [21,23] and stable sources for single-photon emission over a wide range of wavelengths, from near-infrared (NIR) [24] to nearultraviolet (NUV), [25] at room temperature. The giant lightmatter interaction and strong band-edge absorption offered by h-BN enable the realization of solar-blind DUV photo detection by using h-BN as the active layer where DUV photons are effectively absorbed and create electrical carriers. h-BN has also been adopted as active media for low energy electronic devices, including nonvolatile resistive switching (RS) memory and radio-frequency (RF) devices, in addition to passive components for field-effect transistors (FETs), effective diffusion barriers, and low-k interlayer dielectrics (ILDs).This article aims to review the most recent discoveries of extraordinary properties of h-BN and advancements in emerging photonic and electronic applications. Although there are several well-written review articles on h-BN, [26][27][28][29] this review article focuses on the most recent theoretical discoveries, such as the stacking sequences of h-BN and related optical properties, and the elucidation on how an indirect-bandgap h-BN exhibits strong emission as efficient as a direct-bandgap Hexagonal boron nitride (h-BN), an insulating 2D layered material, has recently attracted tremendous interest motivated by the extraordinary properties it shows across the fields of optoelectronics, quantum optics, and electronics, being exotic material platforms for various applications. At an early stage of h-BN research, it is explored as an ideal substrate and insulating layers for other 2D materials due to its atomically flat surface that is free of dangling bonds and charged impurities, and its high thermal conductivity. Recent discoveries of st...

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Section: Optical Properties Of H-bn With Number Of Layersmentioning

confidence: 82%

Section: Properties Of H‐bnmentioning

confidence: 85%

Hexagonal Boron Nitride for Next‐Generation Photonics and Electronics

et al. 2022

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“…Theoretical studies , predict a transition to a direct band gap for BN monolayers (2D) or nanotubes (1D) with a higher radiative yield. This has been confirmed experimentally − in the case of 2D monolayers of h-BN; however, there are no reports in the literature on the FUV emission properties of the 1-D nanostructures.…”

Section: Introductionmentioning

confidence: 67%

Preparation of Confined One-Dimensional Boron Nitride Chains in the 1-D Pores of Siliceous Zeolites under High-Pressure, High-Temperature Conditions

et al. 2022

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Low-dimensional boron nitride (BN) chains were prepared in the one-dimensional pores of the siliceous zeolites theta-one (TON) and Mobil-twelve (MTW) by the infiltration, followed by the dehydrocoupling and pyrolysis of ammonia borane under high-pressure, high-temperature conditions. High-pressure X-ray diffraction in a diamond anvil cell and in a large-volume device was used to follow in situ these different steps in order to determine the optimal conditions for this process. Based on these results, millimeter-sized samples of BN/TON and BN/MTW were synthesized. Characteristic B–N stretching vibrations of low-dimensional BN were observed by infrared and Raman spectroscopies. The crystal structures were determined using a combination of X-ray diffraction and density functional theory with one and two one-dimensional zig-zag (BN) x chains per pore in BN/TON and BN/MTW, respectively. These 1-D BN chains potentially have interesting photoluminescence properties in the far ultraviolet region of the electromagnetic spectrum.

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“…Acoustic phonons exhibit a small phonon linewidth as expected and inferred from other systems like aluminene and stanene. [ 37,46 ] In compound

B_{3}S

, the linewidth associated with the out‐of‐plane transverse and longitudinal optical modes (ZO, TO, LO) significantly exceed the maximum phonon linewidth in

BN

monolayer [ 73 ] and

MoS_{2}

. [ 74 ] Also,

B_{3}Se

compound exhibits much higher phonon linewidth compared to the tungsten diselenide

WSe_{2}

.…”

Section: Resultsmentioning

confidence: 99%

Electron–Phonon Superconductivity in Boron‐Based Chalcogenide (X= S, Se) Monolayers

et al. 2023

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Electron–phonon mediated superconductivity is deeply investigated in two boron based monolayer materials, namely, B3S$B_{3}S$, a metal exhibiting the ability to superconduct, and a new metal, B3Se$B_{3}Se$, presenting perfect kinetic stability. Calculations based on density functional perturbation theory combined with the maximally localized Wannier function also reveal that both materials exhibit anisotropic planar hexagonal structure like graphene. The key parameters involved in the superconductor behavior are all calculated. The electronic density in the Fermi surface is given to provide the environment for enhanced electron–phonon coupling. The longitudinal and transverse vibration modes of optical phonons mainly contribute to the electron–phonon coupling strength. Furthermore, the binding energy between the bosonic Cooper pair superfluid is quantified and determined. The critical temperature for the two materials is 20 and 10.5 K, respectively. The results obtained show the potential use of such materials for superconducting applications.

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Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride

Cited by 11 publications

References 68 publications

Hexagonal Boron Nitride for Next‐Generation Photonics and Electronics

Hexagonal Boron Nitride for Next‐Generation Photonics and Electronics

Preparation of Confined One-Dimensional Boron Nitride Chains in the 1-D Pores of Siliceous Zeolites under High-Pressure, High-Temperature Conditions

Electron–Phonon Superconductivity in Boron‐Based Chalcogenide (X= S, Se) Monolayers

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