Exciton Absorption and Emission in InP

Band‐to‐Band Radiative Recombination in Groups IV, VI, and III–V Semiconductors (II)

“…47), 1.4075 eV. The small difference of 0.0015 eV is almost equal t o the accuracy of measurement of the exciton peak energy, g' iven as -+0.0013 by Turner et al [390].…”

Radiative recombination of excitons in disk-shapedInAs∕InPquantum dots

“…The excitation photon energy ͑1.386 eV͒ in our experiment is lower than the energy gap of the barrier material, InP at low temperatures ͑about 1.42 eV around 10 K͒. 7,8 Thus, we can consider that the optical excitation is selective to the InAs well at the low temperatures. However, as the temperature rises, the InP band gap decreases, which leads to the absorption of the excitation photons in the barrier.…”

Empirical model including band‐to‐band Coulomb interaction for refractive indices of GaAs and InP‐based materials at photon energies near and above the band‐gap

“…4(a) and Fig. 4(b) show our fitting work to the InP data [11,12] with a broadening parameter of 7.2 meV and the related results for ternary compounds In 0.53 Ga 0.47 As [4,13] in Fig. 5 with a broadening parameters of 15 meV.…”

“…We are able to obtain close-form expressions for double-Lorentz broadened (including Coulomb interaction) α, χi and (through Kramers-Kronig transform) χr by using a piecewise linear approximation of the truncated absorption spectrum in the 2nd zone. Accurate fitting of α to the available experimental data [7,9,11,13] makes it possible to deduce the refractive index in the band-edge region accurately. It also yields the values of the matrix element and the broadening parameter b.…”