1992
DOI: 10.1103/physrevb.45.3485
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Excited states of the two-dimensionalDcenter in magnetic fields

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Cited by 98 publications
(56 citation statements)
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“…In principle, both bound-tobound and photoionizing bound-tocontinuum transitions are possible in B. This is in contrast to the 2D negative donor ion D À , for which all internal transitions are bound-to-bound, and there are no allowed photoionizing transitions in strong magnetic fields [27,28]. In the s þ (s À ) polarization the inter-LL e-CR-like Dn e ¼ 1 (h-CR-like Dn h ¼ 1) transitions are strong and gain strength with B (Fig.…”
Section: Intraband Transitionsmentioning
confidence: 73%
See 1 more Smart Citation
“…In principle, both bound-tobound and photoionizing bound-tocontinuum transitions are possible in B. This is in contrast to the 2D negative donor ion D À , for which all internal transitions are bound-to-bound, and there are no allowed photoionizing transitions in strong magnetic fields [27,28]. In the s þ (s À ) polarization the inter-LL e-CR-like Dn e ¼ 1 (h-CR-like Dn h ¼ 1) transitions are strong and gain strength with B (Fig.…”
Section: Intraband Transitionsmentioning
confidence: 73%
“…The latter has been extensively studied in 2D systems in B (see, e.g. [26][27][28][29][30], and references therein). In the case of X À , there are some fundamental differences in the basic physics, which derive from the free motion of the complex.…”
Section: Introductionmentioning
confidence: 99%
“…19,22 Motivated by the significant changes in the ground state energy produced by nearby interfaces, we explore the possibility of having a bound excited state in a doublecharged single donor. Like helium, we expect the D − first excited state to consist of promoting one 1s electron to the 2s orbital.…”
Section: D − First Excited Statementioning
confidence: 99%
“…On the other hand, impurities in semiconductors influence both transport and optical properties so that topics like confined D -centers in low-dimensional space have been extensively investigated. Since the existence of the D -centers in center-doped GaAs/Al x Ga 1-x As multiple quantum wells (QWs) was first reported by Huant et al [3] in 1990, the D -centers in semiconductor nanostructures have been investigated from the experimental [4][5][6] and theoretical [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] points of view.…”
Section: Introduction the Dmentioning
confidence: 99%