Excitatory Post-Synaptic Potential Mimicked in Indium-Zinc-Oxide Synaptic Transistors Gated by Methyl Cellulose Solid Electrolyte

Wen, Jing; Ding, Jianning; Wan, Changjin; Cheng, Guanggui

doi:10.1038/srep38578

Cited by 12 publications

(12 citation statements)

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“…As demonstrated, the capacitance increases with a decreasing frequency, and the maximum capacitance of ~ 0.2 μF/cm 2 was obtained at a frequency of 10 2 Hz. This strong frequency-dependent capacitance can be originated from the EDL effect through the mobile ions within the chitosan electrolyte 23,[28][29][30] . There are many mobile ions in the chitosan electrolyte, which includes anions and cations.…”

Section: Resultsmentioning

confidence: 99%

“…The resistor-loaded inverter exhibits good inverting action and well responds by following a low-power square-wave input signal. Such relaxation time along the order of milliseconds appeared in the output signal is known to be related to the migration and the accumulation of protons in the chitosan electrolyte 19,30 . This long relaxation time is a drawback in traditional www.nature.com/scientificreports/ logic circuit applications, but it is rather favourable in the operation of low-power artificial synaptic electronics, which suggests potential applications 13,31,32 .…”

Section: Resultsmentioning

confidence: 99%

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CMOS-compatible synaptic transistor gated by chitosan electrolyte-Ta2O5 hybrid electric double layer

Min

Cho

2020

Sci Rep

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This study proposes a hybrid electric double layer (EDL) with complementary metal-oxide semiconductor (CMOS) process compatibility by stacking a chitosan electrolyte and a Ta2O5 high-k dielectric thin film. Bio-inspired synaptic transistors with excellent electrical stability were fabricated using the proposed hybrid EDL for the gate dielectric layer. The Ta2O5 high-k dielectric layer with high chemical resistance, thermal stability, and mechanical strength enables CMOS-compatible patterning processes on biocompatible organic polymer chitosan electrolytes. This technique achieved ion-conduction from the chitosan electrolyte to the In-Ga-Zn oxide (IGZO) channel layer. The on/off current ratio, subthreshold voltage swing, and the field-effect mobility of the fabricated IGZO EDL transistors (EDLTs) exhibited excellent electrical properties of 1.80 × 107, 96 mV/dec, and 3.73 cm2/V·s, respectively. A resistor-loaded inverter was constructed by connecting an IGZO EDLT with a load resistor (400 MΩ) in series. This demonstrated good inverter action and responded to the square-wave input signals. Synaptic behaviours such as the hysteresis window and excitatory post-synaptic current (EPSC) variations were evaluated for different DC gate voltage sweep ranges and different AC gate spike stimuli, respectively. Therefore, the proposed organic–inorganic hybrid EDL is expected to be useful for implementing an extremely compact neural architecture system.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

CMOS-compatible synaptic transistor gated by chitosan electrolyte-Ta2O5 hybrid electric double layer

Min

Cho

2020

Sci Rep

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“…Confined water in porous and biological materials has interdisciplinary research interest to explore applications such as novel fuel-cell electrolytes, desalination, , bioprotonic, and nanofluidic devices. − Many studies on confined water have been performed in a variety of nanospaces like carbon nanotubes, − membranes, metal–organic frameworks, − and molecular porous crystals involving a water nanotube (WNT) , or water chain . Moreover, those nanospaces have been actively utilized for the arrangements and storages of molecules or ions. − …”

Section: Introductionmentioning

confidence: 99%

Proton Conduction Inhibited by Xe Hydrates in the Water Nanotube of the Molecular Porous Crystal {{[Ru^III(H₂bim)₃](TMA)}₂·mH₂O}_n

2019

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Gas sorption and molecular (ionic) storages are important functionalities in porous materials. In molecular porous crystal {{[RuIII(H2bim)3](TMA)}2·mH2O} n , the hydrophilic nanochannel accommodates the water nanotube (WNT) composed of a 4461074-polyhedral cage. The experiment on weight change reveals that the cage structure is maintained above 50% RH (relative humidity) at 294 K. As the relative humidity is reduced from 80 to 50% RH, the proton conductivity exponentially decreases from 0.02 to 0.01 (Ω cm)−1 owing to the dehydration of inner H2O molecules through WNT, which acts as a nanofluidic channel. Upon pressurizing Xe at 0.4 MPa for 50% RH, the proton conductivity exponentially decreases and approaches 0 (Ω cm)−1. The infrared and 129Xe-NMR experiments make clear that Xe together with about 25H2O molecules per cage are stabilized in WNT at low pressures compared to Xe-clathrate hydrate. Those results experimentally demonstrate that the Xe hydrate inhibits the proton conduction. The formation of Xe hydrate is characterized by fast and slow processes with a translational diffusion constant of 1 × 10–10 and 6 × 10–12 m2/s, respectively. The reorganization and hardening of the hydrogen-bonding water network are considered to diminish the conducting pass of proton, and to reduce the protonic transfer from H3O+ to adjacent H2O.

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“…As shown in Figure , synaptic devices can be classified into synaptic transistors and synaptic memristors according to the structure. Synaptic transistors consist of floating gate transistors using charge storage on floating gate electrodes to modulate the channel conductance and store synaptic weights, and ionic transistors using the ionic concentration in the channels controlled by the gate to achieve resistive switching of the channels . However, these synaptic transistors are ultimately limited by downscaling.…”

Section: Synaptic Memristormentioning

confidence: 99%

Neuromorphic Computing with Memristor Crossbar

Zhang

Huang

et al. 2018

Physica Status Solidi (a)

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Neural networks, one of the key artificial intelligence technologies today, have the computational power and learning ability similar to the brain. However, implementation of neural networks based on the CMOS von Neumann computing systems suffers from the communication bottleneck restricted by the bus bandwidth and memory wall resulting from CMOS downscaling. Consequently, applications based on large-scale neural networks are energy/ area hungry and neuromorphic computing systems are proposed for efficient implementation of neural networks. Neuromorphic computing system consists of the synaptic device, neuronal circuit, and neuromorphic architecture. With the two-terminal nonvolatile nanoscale memristor as the synaptic device and crossbar as parallel architecture, memristor crossbars are proposed as a promising candidate for neuromorphic computing. Herein, neuromorphic computing systems with memristor crossbars are reviewed. The feasibility and applicability of memristor crossbars based neuromorphic computing for the implementation of artificial neural networks and spiking neural networks are discussed and the prospects and challenges are also described.

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Excitatory Post-Synaptic Potential Mimicked in Indium-Zinc-Oxide Synaptic Transistors Gated by Methyl Cellulose Solid Electrolyte

Cited by 12 publications

References 33 publications

CMOS-compatible synaptic transistor gated by chitosan electrolyte-Ta2O5 hybrid electric double layer

CMOS-compatible synaptic transistor gated by chitosan electrolyte-Ta2O5 hybrid electric double layer

Proton Conduction Inhibited by Xe Hydrates in the Water Nanotube of the Molecular Porous Crystal {{[Ru^III(H₂bim)₃](TMA)}₂·mH₂O}_n

Neuromorphic Computing with Memristor Crossbar

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Excitatory Post-Synaptic Potential Mimicked in Indium-Zinc-Oxide Synaptic Transistors Gated by Methyl Cellulose Solid Electrolyte

Cited by 12 publications

References 33 publications

CMOS-compatible synaptic transistor gated by chitosan electrolyte-Ta2O5 hybrid electric double layer

CMOS-compatible synaptic transistor gated by chitosan electrolyte-Ta2O5 hybrid electric double layer

Proton Conduction Inhibited by Xe Hydrates in the Water Nanotube of the Molecular Porous Crystal {{[RuIII(H2bim)3](TMA)}2·mH2O}n

Neuromorphic Computing with Memristor Crossbar

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Proton Conduction Inhibited by Xe Hydrates in the Water Nanotube of the Molecular Porous Crystal {{[Ru^III(H₂bim)₃](TMA)}₂·mH₂O}_n