Excitation efficiency of electrons and holes in forward and reverse biased epitaxially grown Er-doped Si diodes

Markmann, M.; Neufeld, Esra; Sticht, A.; Βrunner, Karl; Abstreiter, G.

doi:10.1063/1.1338955

Cited by 26 publications

(16 citation statements)

References 12 publications

(17 reference statements)

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“…As a result, Er-doped Si materials have previously been investigated for intense Er-related emission by electric excitation at room temperature for future optoelectronic integration. The PL and electroluminescence of Er-doped crystalline Si in particular have been widely studied [1][2][3][4][5]. While the Er concentration needed for any practical application is estimated to be about 10 18 cm -3 [6], the solubility of Er in crystalline Si is much lower.…”

Section: Introductionmentioning

confidence: 99%

Infrared luminescence of erbium-silicon-oxide crystalline compound on silicon

Ishiyama

Higuchi

Obata

et al. 2012

2012 IEEE 3rd International Conference on Photonics

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The photoluminescence (PL) properties of crystalline Er-Si-O compound on silicon substrate prepared using a simple method through evaporation and thermal annealing have been investigated. Diffraction peaks corresponding to crystalline Er-Si-O were clearly detected in X-ray diffraction measurements. Er-related infrared luminescence was observed at around 1.52 m at room temperature. This luminescence of the crystalline Er-Si-O compound on Si was due not to direct excitation of the 4f shell of Er 3+ , but to excitation of the host Si, i.e. indirect excitation. The observed luminescence was very intense compared with that of a sample prepared by a wet-chemical method using ErCl 3 . The Er-related PL spectra also showed several peaks at room temperature, which reflected the splitting patterns of ground manifolds ( 4 I 15/2 ) for the 4f 11 shell of Er 3+ . Significant differences in peak wavelengths between the crystalline Er-Si-O compound on Si substrate and Er-doped Si on Si substrate (Si:Er:O/Si) grown by molecular beam epitaxy were observed in the PL spectra at 77 K. In addition, temperature quenching of Er-related infrared luminescence was greatly reduced in the crystalline Er-Si-O compound prepared using the simple method. Finally, a new electron spin resonance spectrum was detected for the crystalline Er-Si-O compound on silicon substrate, thought to be related to the presence of Er atoms in the compound.

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Section: Introductionmentioning

confidence: 99%

Infrared luminescence of erbium-silicon-oxide crystalline compound on silicon

Ishiyama

Higuchi

Obata

et al. 2012

2012 IEEE 3rd International Conference on Photonics

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“…The luminescence of Er is characterized by a temperatureindependent wavelength and narrow line width. Photoluminescence (PL) and electroluminescence (EL) of Erdoped Si have widely been studied [1][2][3][4][5][6][7][8][9][10][11]. While the Er concentration needed for any practical applications is estimated to be about 10 18 cm À3 [12], the solubility of Er in Si is much lower.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of photoluminescence at 1.54μm from Er in strained Si and SiGe

Ishiyama

Yoneyama

Yamashita

et al. 2006

Physica B: Condensed Matter

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“…Furthermore, the Si:Er/O material system can be integrated with the devices manufactured by the well established Si process technology. Si:Er/O light-emitting diodes ͑LEDs͒ emitting 1.54 m light have been extensively studied over a period of time, [11][12][13][14][15][16][17] e.g., to understand the mechanism of Er 3+ excitation for improving the efficiency of these devices. Unlike III-V LEDs, Si:Er/O LEDs are preferentially operated in reverse bias condition because it is well known that the hot electron impact excitation of Er ions in the reverse breakdown region is much more efficient as compared to Er 3+ excitation via electron hole recombination in forward bias.…”

Section: Introductionmentioning

confidence: 99%

“…Unlike III-V LEDs, Si:Er/O LEDs are preferentially operated in reverse bias condition because it is well known that the hot electron impact excitation of Er ions in the reverse breakdown region is much more efficient as compared to Er 3+ excitation via electron hole recombination in forward bias. 14,15 One of the key issues in these devices is the response of their electroluminescence ͑EL͒ to temperature. Initially there were reports on strong low temperature EL that quenches drastically with increasing temperature, particularly at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Influence of exposure to 980 nm laser radiation on the luminescence of Si:Er/O light-emitting diodes

Karim

Hansson

2008

Journal of Applied Physics

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Erbium ͑Er͒ codoping with oxygen ͑O͒ in Si is a well-known method for producing electroluminescent material radiating at 1.54 m through a 4f shell transition of Er 3+ ions. In this work the influence of exposure to 980 nm radiation on the electroluminescence ͑EL͒ of reverse biased Si:Er/O light-emitting diodes ͑LEDs͒, which give a strong room temperature 1.54 m intensity, is presented and discussed. All the device layers, including Er/O doped Si sandwiched between two Si 0.82 Ge 0.18 layers, have been grown on silicon on insulator substrates using molecular beam epitaxy and processed to fabricate edge emitting Si:Er/O waveguide LEDs. Electromagnetic mode confinement simulations have been performed to optimize the layer parameters for waveguiding. The temperature dependence of the 1.54 m EL intensity exhibits an abnormal temperature quenching with a peak near −30°C, and at −160°C it has decreased by a factor of 5. However, irradiating the devices with a 980 nm laser gives an enhancement of the 1.54 m EL intensity, which is more dramatic at low temperatures ͑e.g., −200°C͒ where the quenched EL signal is increased up to almost the same level as at room temperature. The enhancement of the EL intensity is attributed to the photocurrent generated by the 980 nm laser, reducing the detrimental avalanche current.

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Excitation efficiency of electrons and holes in forward and reverse biased epitaxially grown Er-doped Si diodes

Cited by 26 publications

References 12 publications

Infrared luminescence of erbium-silicon-oxide crystalline compound on silicon

Infrared luminescence of erbium-silicon-oxide crystalline compound on silicon

Enhancement of photoluminescence at 1.54μm from Er in strained Si and SiGe

Influence of exposure to 980 nm laser radiation on the luminescence of Si:Er/O light-emitting diodes

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