2014
DOI: 10.1021/jp507383w
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Excitation-Dependent Ultrafast Carrier Dynamics of Colloidal TiO2 Nanorods in Organic Solvent

Abstract: The relaxation dynamics of charge carriers of organic capped TiO2 nanorods dispersed in chloroform was investigated by femtosecond transient absorption in a weak-excitation regime. Anisotropic TiO2 nanocrystals were excited in the UVvis range, using different pump wavelengths, namely above (300 nm), close to (350 nm), and below (430 nm) the direct band gap of anatase TiO2. We show that the ultrafast dynamics strongly depends on excitation wavelength and determine the time constants of all the processes enterin… Show more

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Cited by 18 publications
(35 citation statements)
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“…The same broad, featureless absorption in the visible region is observed for all samples; however, I-250 shows a significantly higher absorbance in the near-IR, which does not decay down to the baseline even at long delay times (>3 ns) when measured in air. The broad, featureless absorption in the visible region observed in all spectra is indicative of the formation of coulombically bound excitons (22,27,42). The presence of enhanced near-IR absorption is attributed to charge carriers in shallow trap states created by defects within the material, such as oxygen vacancies and surface hydroxyl groups (21,22,26).…”
Section: Resultsmentioning
confidence: 87%
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“…The same broad, featureless absorption in the visible region is observed for all samples; however, I-250 shows a significantly higher absorbance in the near-IR, which does not decay down to the baseline even at long delay times (>3 ns) when measured in air. The broad, featureless absorption in the visible region observed in all spectra is indicative of the formation of coulombically bound excitons (22,27,42). The presence of enhanced near-IR absorption is attributed to charge carriers in shallow trap states created by defects within the material, such as oxygen vacancies and surface hydroxyl groups (21,22,26).…”
Section: Resultsmentioning
confidence: 87%
“…Using nearband-gap excitation, trap states and shallow donor (acceptor) states near the conduction (valence) band edge can be directly excited (27). The lower potential energy of the photogenerated charge carriers means they are more likely to be trapped at these localized surface states, leading to longer-lived excited states.…”
Section: Resultsmentioning
confidence: 99%
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