Excitation and nonradiative deexcitation processes of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mi mathvariant="normal">Er</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn><mml:mo>+</mml:mo></mml:mrow></mml:msup></mml:mrow></mml:math>in crystalline Si

Priolo, F.; Franzò, G.; Coffa, S.; Carnera, A.

doi:10.1103/physrevb.57.4443

Cited by 277 publications

(182 citation statements)

References 43 publications

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“…For Auger quenching to free holes, a similar relation holds. The Auger quenching coefficient for Er in Si has recently been measured by Priolo et al 5 and amounts to 5ϫ10 Ϫ13 cm 3 s Ϫ1 for both electrons and holes. In the fitting procedure we vary N D and E d , while the Fermi energy as a function of temperature is numerically determined.…”

Section: B Auger Quenching "W Ae W Ah …mentioning

confidence: 99%

“…2,5,6,8 Two quenching mechanisms have been identified. First, at temperatures typically above 30 K, Auger quenching takes place, 4 in which an excited Er ion is deexcited by energy transfer to a free electron or hole ͑W A,e and W A,h in Fig.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5][6][7] Previously, this material has mainly been studied because it provides a means to attain light emission from silicon, a phenomenon that is of great importance in Si-based optoelectronic technology. Indeed, room-temperature photoluminescence ͑PL͒ from Er-doped silicon has been reported, and room-temperature light-emitting diodes have been fabricated.…”

Section: Introductionmentioning

confidence: 99%

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Energy backtransfer and infrared photoresponse in erbium-doped silicon p–n diodes

Hamelin

Kik

Suyver

et al. 2000

Journal of Applied Physics

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Temperature-dependent measurements of the photoluminescence ͑PL͒ intensity, PL lifetime, and infrared photocurrent, were performed on an erbium-implanted silicon p -n junction in order to investigate the energy transfer processes between the silicon electronic system and the Er 4 f energy levels. The device features excellent light trapping properties due to a textured front surface and a highly reflective rear surface. The PL intensity and PL lifetime measurements show weak temperature quenching of the erbium intra-4 f transition at 1.535 m for temperatures up to 150 K, attributed to Auger energy transfer to free carriers. For higher temperatures, much stronger quenching is observed, which is attributed to an energy backtransfer process, in which Er deexcites by generation of a bound exciton at an Er-related trap. Dissociation of this exciton leads to the generation of electron-hole pairs that can be collected as a photocurrent. In addition, nonradiative recombination takes place at the trap. It is shown for the first time that all temperature-dependent data for PL intensity, PL lifetime, and photocurrent can be described using a single model. By fitting all temperature-dependent data simultaneously, we are able to extract the numerical values of the parameters that determine the ͑temperature-dependent͒ energy transfer rates in erbium-doped silicon. While the external quantum efficiency of the photocurrent generation process is small (1.8ϫ10 Ϫ6 ) due to the small erbium absorption cross section and the low erbium concentration, the conversion of Er excitations into free e -h pairs occurs with an efficiency of 70% at room temperature.

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Section: B Auger Quenching "W Ae W Ah …mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Energy backtransfer and infrared photoresponse in erbium-doped silicon p–n diodes

Hamelin

Kik

Suyver

et al. 2000

Journal of Applied Physics

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“…Unfortunately, for Er-doped crystalline Si nonradiative deexcitation processes lead to thermal quenching of Er 3+ emission. 2 On the other hand, in a dielectric like SiO 2 , which provides good thermal stability of Er 3+ PL, its excitation efficiency is low, as only resonant energy absorption by the Er 3+ 4f electron core is possible. To combine the advantages of both hosts, a different type of Si-based Er-doped optical medium was recently explored.…”

mentioning

confidence: 99%

Sensitization of Er luminescence by Si nanoclusters

et al. 2004

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“…1 In fact, although silicon is an indirect band gap semiconductor, the development of an all-silicon device showing efficient light emission at room temperature would entail enormous benefits. Many different strategies have been explored to make silicon an efficient infrared emitter at strategic telecom wavelengths, including doping with rare-earth atoms, 2,3 or exploiting optically active structural defects. [4][5][6][7][8] Though very promising, devices based on silicon subband gap luminescence are still impractical because emission intensity is strongly quenched for temperatures above Ӎ100 K and becomes almost undetectable at room temperature.…”

mentioning

confidence: 99%

Room-temperature emission at telecom wavelengths from silicon photonic crystal nanocavities

Savio

Portalupi

Gerace

et al. 2011

Applied Physics Letters

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Strongly enhanced light emission at wavelengths between 1.3 and 1.6 μm is reported at room temperature in silicon photonic crystal (PhC) nanocavities with optimized out-coupling efficiency. Sharp peaks corresponding to the resonant modes of PhC nanocavities dominate the broad sub-bandgap emission from optically active defects in the crystalline Si membrane. We measure a 300-fold enhancement of the emission from the PhC nanocavity due to a combination of far-field enhancement and the Purcell effect. The cavity enhanced emission has a very weak temperature dependence, namely less than a factor of 2 reduction between 10 K and room temperature, which makes this approach suitable for the realization of efficient light sources as well as providing a quick and easy tool for the broadband optical characterization of silicon-on-insulator nanostructures.

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Excitation and nonradiative deexcitation processes ofEr3+in crystalline Si

Cited by 277 publications

References 43 publications

Energy backtransfer and infrared photoresponse in erbium-doped silicon p–n diodes

Energy backtransfer and infrared photoresponse in erbium-doped silicon p–n diodes

Sensitization of Er luminescence by Si nanoclusters

Room-temperature emission at telecom wavelengths from silicon photonic crystal nanocavities

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