Abstract:Si ion implantation was widely used to synthesize specimens of SiO 2 containing supersaturated Si and subsequent high temperature annealing induces the formation of embedded luminescent Si nanocrystals. In this work, the potentialities of excimer UV-light (172 nm, 7.2 eV) irradiation and rapid thermal annealing (RTA) to enhance the photoluminescence and achieve low temperature (below 1000 o C) formation of Si nanocrystals have been investigated. The Si ions were introduced at acceleration energy of 180 keV to … Show more
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