Excimer laser recrystallization of amorphous Si films characterized by grazing X-ray diffraction and optical reflectivity

Mathé, E.L.; Maillou, J.G.; Naudon, A.; Fogarassy, É.; Elliq, M.; Unamuno, S. de

doi:10.1016/0169-4332(89)90203-1

Cited by 14 publications

(2 citation statements)

References 4 publications

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“…Pulsed laser induced crystallization of silicon films has been precisely investigated and widely applied to fabrication of polycrystalline silicon thin film transistors (poly-Si TFTs) [4][5][6][7][8][9][10]. The electrical and structural properties of polycrystalline silicon (poly-Si) thin films formed by pulsed laser irradiation have been reported.…”

Section: Introductionmentioning

confidence: 99%

Pulsed laser crystallization of silicon–germanium films

Sameshima¹,

Watakabe²,

Kanno³

et al. 2005

Thin Solid Films

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Section: Introductionmentioning

confidence: 99%

Pulsed laser crystallization of silicon–germanium films

Sameshima¹,

Watakabe²,

Kanno³

et al. 2005

Thin Solid Films

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“…Pulsed-excimer-laser crystallization has been widely applied to the formation of polycrystalline silicon films for the fabrication of polycrystalline-silicon thin-film transistors (poly-Si TFTs) at low processing temperatures. [8][9][10][11][12][13][14][15] The formation of crystalline silicon films with thicknesses from 20 to 100 nm has been established by pulsed-laser crystallization. A high crystalline volume ratio and crystalline grains with excellent properties have been obtained.…”

Section: Introductionmentioning

confidence: 99%

Pulsed Laser Annealing of Thin Silicon Films

Sameshima¹,

Watakabe²,

Andoh³

et al. 2006

jjap

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Using Monte Carlo simulations and self-consistent field (SCF) theory we study the surface and interface properties of a coarse grained off-lattice model. In the simulations we employ the grand canonical ensemble together with a reweighting scheme in order to measure surface and interface free energies and discuss various methods for accurately locating the wetting transition. In the SCF theory, we use a partial enumeration scheme to incorporate singlechain properties on all length scales and use a weighted density functional for the excess free energy. The results of various forms of the density functional are compared quantitatively to the simulation results. For the theory to be accurate, it is important to decompose the free energy functional into a repulsive and an attractive part, with different approximations for the two parts.Measuring the effective interface potential for our coarse grained model we explore routes for controlling the equilibrium wetting properties. (i) Coating of the substrate by an oxide layer gives rise to a subtle interplay between shortrange and long-range forces,which may stabilize a film of mesoscopic thickness or result in the formation of nano-droplets. (ii) Coating the substrate with a polymer brush, we observe second-order wetting transitions at intermediate grafting densities, while the wetting transition is of first order at low and high grafting densities. In the latter limit, polymers of the same chemical structure as the brush do not wet the surface (autophobicity). (iii) Surface pattern (stripes) might give rise to unusual adsorption properties, which are related to morphological transitions. We relate our findings to experiments and discuss perspectives and limitations of the computational methods.

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Poly-Si TFTs by Laser Crystallization Methods

Sameshima¹

2004

Thin Film Transistors

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Excimer laser recrystallization of amorphous Si films characterized by grazing X-ray diffraction and optical reflectivity

Cited by 14 publications

References 4 publications

Pulsed laser crystallization of silicon–germanium films

Pulsed laser crystallization of silicon–germanium films

Pulsed Laser Annealing of Thin Silicon Films

Poly-Si TFTs by Laser Crystallization Methods

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