2013
DOI: 10.1002/pssa.201329012
|View full text |Cite
|
Sign up to set email alerts
|

Excimer laser doping using highly doped silicon nanoparticles

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
9
0

Year Published

2015
2015
2018
2018

Publication Types

Select...
6
1

Relationship

2
5

Authors

Journals

citations
Cited by 14 publications
(10 citation statements)
references
References 28 publications
0
9
0
Order By: Relevance
“…Meseth et al proposed heavily doped Si nanocrystals as a dopant source to produce doped bulk crystalline silicon via the laser doping method . This process involves the laser annealing of films of doped nanocrystals on bulk Si with a pulsed excimer laser .…”
Section: Applicationsmentioning
confidence: 99%
See 2 more Smart Citations
“…Meseth et al proposed heavily doped Si nanocrystals as a dopant source to produce doped bulk crystalline silicon via the laser doping method . This process involves the laser annealing of films of doped nanocrystals on bulk Si with a pulsed excimer laser .…”
Section: Applicationsmentioning
confidence: 99%
“…Meseth et al proposed heavily doped Si nanocrystals as a dopant source to produce doped bulk crystalline silicon via the laser doping method . This process involves the laser annealing of films of doped nanocrystals on bulk Si with a pulsed excimer laser . The nanocrystal plasma synthesis can be scaled to industrial levels and films can be produced at low cost using colloidal or impaction techniques .…”
Section: Applicationsmentioning
confidence: 99%
See 1 more Smart Citation
“…Thus, the material forms tubular structures within the short time it is molten, leading to the meander structures observed. Note that non‐ porous films can be obtained, e.g., using a Si wafer as a substrate and applying very high fluences .…”
Section: Processing To Nanocrystalline Bulk and Laser‐sintered Thin Fmentioning
confidence: 99%
“…A higher resolution allows a better structural analysis of sample properties, e.g., grain boundaries in multicrystalline solar cells [2] or while evaluating the emitter layer process homogeneity [3]. To ensure that the LS beam diameter is minimal in the area under investigation, different focusing methods have been published [4]- [11].…”
Section: Introductionmentioning
confidence: 99%