Excimer laser crystallization of amorphous silicon carbide produced by ion implantation

Hedler, A.; Urban, S.; Falk, F.; Hobert, H.; Wesch, W.

doi:10.1016/s0169-4332(02)01071-1

Cited by 16 publications

(9 citation statements)

References 16 publications

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“…Nevertheless, a-SiC can be transferred to a metastable liquid similar to Si. The metastable liquid transforms into nc-SiC within the 10-100 ns range [16,17], independent of melt temperature. Large grains cannot be generated in SiC by longer laser pulses.…”

Section: Experimental Results: Other Semiconductorsmentioning

confidence: 99%

Laser crystallization — a way to produce crystalline silicon films on glass or on polymer substrates

Falk¹,

Andrä²

2006

Journal of Crystal Growth

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Section: Experimental Results: Other Semiconductorsmentioning

confidence: 99%

Laser crystallization — a way to produce crystalline silicon films on glass or on polymer substrates

Falk¹,

Andrä²

2006

Journal of Crystal Growth

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“…9 Previous research has shown that the threshold for melting the surface of a-SiC is strongly dependent on the thickness of the amorphous SiC layer. [10][11][12] So, it was unclear whether the strong dependence we observed for the A G threshold on implanted ion species was due to the amorphous surface layer produced by the ion implantation process, or to a catalytic effect due to the implanted ion species (doping), or both. To investigate further, we devised experiments to study these effects separately.…”

Section: Resultsmentioning

confidence: 93%

“…Early studies by Baeri et al used time-resolved reflectivity experiments to determine the minimum laser fluences required from a pulsed Ruby laser to melt a-SiC layers of different thicknesses, produced by Ar þ ion implantation; 10 and related numerical simulations were conducted by Dutto et al 11 and Hedler et al 12 We performed similar calculations for our different experimental conditions. A finite element analysis was used to estimate the surface temperature during the PLA process.…”

Section: Thermal Simulationsmentioning

confidence: 95%

“…Figure 2 shows the laser fluence required to melt a given thickness of a-SiC on c-SiC, based on our thermal simulation results. We used 2445 K as the a-SiC melting temperature, [10][11][12] and the remaining thermal properties of a-SiC and c-SiC are listed in Table II. The trend of decreasing fluence with increasing thickness is due to the poor thermal conductivity of a-SiC compared to c-SiC.…”

Section: Thermal Simulationsmentioning

confidence: 99%

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Synthesis of graphene and graphene nanostructures by ion implantation and pulsed laser annealing

Wang

Berke

Rudawski

et al. 2016

Journal of Applied Physics

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In this paper, we report a systematic study that shows how the numerous processing parameters associated with ion implantation (II) and pulsed laser annealing (PLA) can be manipulated to control the quantity and quality of graphene (G), few-layer graphene (FLG), and other carbon nanostructures selectively synthesized in crystalline SiC (c-SiC). Controlled implantations of Si À plus C À and Au þ ions in c-SiC showed that both the thickness of the amorphous layer formed by ion damage and the doping effect of the implanted Au enhance the formation of G and FLG during PLA. The relative contributions of the amorphous and doping effects were studied separately, and thermal simulation calculations were used to estimate surface temperatures and to help understand the phase changes occurring during PLA. In addition to the amorphous layer thickness and catalytic doping effects, other enhancement effects were found to depend on other ion species, the annealing environment, PLA fluence and number of pulses, and even laser frequency. Optimum II and PLA conditions are identified and possible mechanisms for selective synthesis of G, FLG, and carbon nanostructures are discussed.

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“…Due to the low diffusivity of the dopant species in the material, the ion-implantation technique is the consolidated method for selective doping in 4H-SiC power electronics devices, such as junction barrier Schottky (JBS) diodes or MOSFETs. , Nonetheless, the ion-implantation process inevitably leads to the production of lattice damage or even amorphization of the material . Hence, postimplantation thermal annealing treatments are conventionally performed in furnaces at high temperature (>1600 °C), to partially recover the crystalline structure of the semiconductor and achieve the electrical activation of the dopant species, bringing them in substitutional lattice sites . However, the electrical activation of the dopant species is limited by both their solid solubility and the attainable annealing temperature in conventional high temperature furnaces.…”

Section: Introductionmentioning

confidence: 99%

Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC)

Vivona

Giannazzo

Bellocchi

et al. 2022

ACS Appl. Electron. Mater.

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This paper reports on the effects of excimer laser irradiation on an aluminum (Al)-doped silicon carbide (4H-SiC) layer. Specifically, high-concentration (1 × 1020 at/cm3) Al-implanted 4H-SiC samples were exposed to a few pulses of 308 nm laser radiation (pulse duration of 160 ns), with fluence varying from 1.0 to 2.8 J/cm2. As a starting point, the laser-induced modifications of the morphological, microstructural, and nanoelectrical properties of the exposed 4H-SiC surface were monitored by combining different techniques. From these investigations, an evolution of the surface morphology was observed that can be ascribed to a conversion during irradiation of the uppermost part of the 4H-SiC implanted layer into a polycrystalline region of 3C-SiC and 6H-SiC grains, surmounted in the order by a crystalline-Si layer and an amorphous C-rich region. Then, the electrical characteristics of the implanted layer were evaluated by means of test structures appropriately fabricated on the samples. The high value of sheet-resistance of the irradiated layer (in the order of 104 kΩ/sq) suggested a poor activation of the p-type dopant and/or a low mobility of the carriers in the polycrystalline 3C-SiC/6H-SiC layer. The outcomes of this study can be useful for a fundamental understanding of laser annealing treatments of 4H-SiC implanted layers, toward a possible use in 4H-SiC technology of this process.

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Excimer laser crystallization of amorphous silicon carbide produced by ion implantation

Cited by 16 publications

References 16 publications

Laser crystallization — a way to produce crystalline silicon films on glass or on polymer substrates

Laser crystallization — a way to produce crystalline silicon films on glass or on polymer substrates

Synthesis of graphene and graphene nanostructures by ion implantation and pulsed laser annealing

Effects of Excimer Laser Irradiation on the Morphological, Structural, and Electrical Properties of Aluminum-Implanted Silicon Carbide (4H-SiC)

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