Excimer-laser-annealed poly-Si thin-film transistors

Brotherton, S. D.; McCulloch, D.J.; Clegg, J. B.; Gowers, J. P.

doi:10.1109/16.182521

Cited by 166 publications

(72 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1 Introduction High quality polycrystalline silicon (poly-Si) thin-films can efficiently be fabricated using excimer laser crystallization of amorphous silicon (a-Si) [1]. The hydrogen content of the amorphous starting material has to be low to avoid explosive out-diffusion, which causes ablation of the entire film.…”

mentioning

confidence: 99%

Influence of laser crystallization on hydrogen bonding in poly‐Si

Nickel

Maydell

2008

Phys. Status Solidi (c)

View full text Add to dashboard Cite

We investigate the influence of the hydrogen content in the amorphous starting material on hydrogen bonding and defect passivation in laser crystallized poly‐Si using electron‐spin‐resonance and hydrogen effusion measurements. After laser dehydrogenation and crystallization the specimens contain a residual H concentration of 8×1021 cm–3 to 1.5×1022 cm–3. During a vacuum anneal at least 1.5×1021 cm–3 H atoms are mobile in the lattice, however, only about 3.7×1018 cm–3 H atoms passivate Si dangling‐bonds. Our results show that the annealing treatment can cause the vast majority of H atoms to accumulate in H stabilized platelets. Since defect passivation preferentially occurs at grain boundaries and platelet nucleation and growth is confined to the interior of single crystal grains, H equilibration is governed by two spatially separated processes. Moreover, our data demonstrate that the hydrogen density‐of‐states distribution derived from H effusion data is dynamic and changes in response to experimental parameters. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

mentioning

confidence: 99%

Influence of laser crystallization on hydrogen bonding in poly‐Si

Nickel

Maydell

2008

Phys. Status Solidi (c)

View full text Add to dashboard Cite

show abstract

“…High reliability should also be achieved for the fabrication of commercial products to be possible. With the recent polysilicon crystallization process breakthroughs, using various excimer laser anneal (ELA) methods such as sequential lateral solidification (SLS), the TFT performance has substantially increased [2][3][4][5][6]. The several variations of the SLS technique allow the manufacturing of polysilicon films with excellent intragrain quality and grains of different geometry.…”

mentioning

confidence: 99%

The effect of crystallization technology and gate insulator deposition method on the performance and reliability of polysilicon TFTs

Moschou¹,

Kontogiannopoulos²,

Kouvatsos³

et al. 2008

Phys. Status Solidi (c)

View full text Add to dashboard Cite

A promising, general strategy for improving performance of optoelectronic devices based on conjugated polymer semiconductors is to make better use of the fast intrachain transport along the covalently bonded polymer backbone. Little is known, however, about how the recombination rate between electrons and holes would be affected in device structures in which current flow is primarily along the polymer chain. Here a light‐emitting field effect transistor (LFET) structure with a uniaxially aligned semiconducting polymer is used to show that the width and shape of the recombination zone depend strongly on polymer alignment. For alignment of the polymer parallel to the current the emission zone is 5–10 times wider than for perpendicular alignment. 2D drift‐diffusion modeling is used to show that such significant widening of the recombination zone in the case of parallel alignment implies that the recombination rate constant is more than 100 times lower than expected for standard Langevin recombination. On the basis of Monte Carlo modeling it is proposed that such unexpected weak recombination is a result of the significant mobility anisotropy of the aligned polymer. These results provide new fundamental insight into the recombination physics of polymer semiconductors.

show abstract

“…Excimer laser (EL) crystallisation has been the preferred method for nanocrystalline thin film formation from hydrogenated amorphous silicon (a-Si:H) thin film transistors [1][2][3][4]. Pulsed laser energy melts and solidifies thin a-Si:H films within nanosecond time scales, systematically evolving hydrogen and forming nanocrystalline silicon (nc-Si:H).…”

Section: Introductionmentioning

confidence: 99%

Improved Efficiency in Hydrogenated Amorphous Silicon Solar Cells Irradiated by Excimer Laser

et al. 2004

View full text Add to dashboard Cite

Excimer laser crystallisation is used to fabricate nanocrystalline thin film silicon Schottky barrier solar cells, in a superstrate configuration with indium tin oxide as the front contact and chromium as the back contact. 150 nm thick intrinsic absorber layers are used for the solar cells, and was crystallised using an excimer laser with different laser energy densities. These layers were characterised using Raman spectroscopy and optical absorption before device fabrication. External quantum efficiencies of the devices were calculated from the spectral response data of the devices. A maximum efficiency of 70 % is observed for low energy irradiation, which is significant for very thin absorber layers. Device operation is discussed with proposed band structures for the devices and supplementary measurements.

show abstract

Excimer-laser-annealed poly-Si thin-film transistors

Cited by 166 publications

References 11 publications

Influence of laser crystallization on hydrogen bonding in poly‐Si

Influence of laser crystallization on hydrogen bonding in poly‐Si

The effect of crystallization technology and gate insulator deposition method on the performance and reliability of polysilicon TFTs

Improved Efficiency in Hydrogenated Amorphous Silicon Solar Cells Irradiated by Excimer Laser

Contact Info

Product

Resources

About