Exchange-Induced Electron Transport in Heavily Phosphorus-Doped Si Nanowires

Park, Tae Eon; Min, Byoung‐Chul; Kim, Ilsoo; Yang, Jee Eun; Jo, Moon Ho; Chang, Joonyeon; Choi, Heon Jin

doi:10.1021/nl202535d

Cited by 19 publications

(13 citation statements)

References 53 publications

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“…Weak gate modulation, the temperature dependence of the resistance and low contact resistance were observed. These characteristics confirm that the GaN NWs are highly degenerate n -type semiconductors22 (Supplementary Fig. 4), behaviour that has been explained by the presence of nitrogen vacancies and/or oxygen impurities23.…”

Section: Resultssupporting

confidence: 73%

Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires

Park

Lee

et al. 2017

Nat Commun

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Semiconductor spintronics is an alternative to conventional electronics that offers devices with high performance, low power and multiple functionality. Although a large number of devices with mesoscopic dimensions have been successfully demonstrated at low temperatures for decades, room-temperature operation still needs to go further. Here we study spin injection in single-crystal gallium nitride nanowires and report robust spin accumulation at room temperature with enhanced spin injection polarization of 9%. A large Overhauser coupling between the electron spin accumulation and the lattice nuclei is observed. Finally, our single-crystal gallium nitride samples have a trigonal cross-section defined by the (001), () and () planes. Using the Hanle effect, we show that the spin accumulation is significantly different for injection across the (001) and () (or ()) planes. This provides a technique for increasing room temperature spin injection in mesoscopic systems.

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Section: Resultssupporting

confidence: 73%

Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires

Park

Lee

et al. 2017

Nat Commun

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“…Silicon nanowires (SiNWs) have considerable potential for several applications including electronics [1][2][3][4], sensors [5][6][7], energy conversion [8][9][10][11], and photonic devices [12,13] owing to their novel physical and chemical properties. Meanwhile, the structural modulation of NWs is critical to exploit their potential and realize devices with high performance [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Structural modulation of silicon nanowires by combining a high gas flow rate with metal catalysts

Seo¹,

Lee²,

Kim³

et al. 2016

Nano Online

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We grew silicon nanowires (SiNWs) by a vapor-liquid-solid (VLS) mechanism using metal catalysts of gold (Au), titanium (Ti), manganese (Mn), and iron (Fe) under a high flow rate of hydrogen (H 2). This combination of catalyst types and high gas flow rate revealed the potential for growing various SiNWs, including kinked SiNWs (with Au), ultra-thin SiNWs having diameters about 5 nm (with Ti), rough-surfaced SiNWs (with Mn), and ribbon-shaped SiNWs tens of microns in width (with Fe). The high flow rate of gas affects the VLS mechanism differently for each combination; for example, it induces an unstable solid-liquid interfaces (with Au), active etching of the catalyst (with Ti), sidewall deposition by a vapor-solid (VS) mechanism, and an asymmetric precipitation of Si in the catalyst (with Fe). Our combinatorial approach may provide a new path for the structural modulation of SiNWs via the VLS mechanism.

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“…Silicon nanowires (SiNWs) have considerable potential for several applications including electronics [ 1 - 4 ], sensors [ 5 - 7 ], energy conversion [ 8 - 11 ], and photonic devices [ 12 , 13 ] owing to their novel physical and chemical properties. Meanwhile, the structural modulation of NWs is critical to exploit their potential and realize devices with high performance [ 14 - 16 ].…”

Section: Introductionmentioning

confidence: 99%

Structural modulation of silicon nanowires by combining a high gas flow rate with metal catalysts

et al. 2015

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We grew silicon nanowires (SiNWs) by a vapor-liquid-solid (VLS) mechanism using metal catalysts of gold (Au), titanium (Ti), manganese (Mn), and iron (Fe) under a high flow rate of hydrogen (H2). This combination of catalyst types and high gas flow rate revealed the potential for growing various SiNWs, including kinked SiNWs (with Au), ultra-thin SiNWs having diameters about 5 nm (with Ti), rough-surfaced SiNWs (with Mn), and ribbon-shaped SiNWs tens of microns in width (with Fe). The high flow rate of gas affects the VLS mechanism differently for each combination; for example, it induces an unstable solid-liquid interfaces (with Au), active etching of the catalyst (with Ti), sidewall deposition by a vapor-solid (VS) mechanism, and an asymmetric precipitation of Si in the catalyst (with Fe). Our combinatorial approach may provide a new path for the structural modulation of SiNWs via the VLS mechanism.PACS: 80; 81; 82

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Exchange-Induced Electron Transport in Heavily Phosphorus-Doped Si Nanowires

Cited by 19 publications

References 53 publications

Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires

Large spin accumulation and crystallographic dependence of spin transport in single crystal gallium nitride nanowires

Structural modulation of silicon nanowires by combining a high gas flow rate with metal catalysts

Structural modulation of silicon nanowires by combining a high gas flow rate with metal catalysts

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