Exchange biasing observed in the Co/Ir20Mn80 system

Chen, Yuan-Tsung; Jen, S. U.; Yao, Y. D.; Wu, Jenn-Ming; Liao, Jey-Hwa; Wu, Tai–Bor

doi:10.1016/j.jallcom.2006.12.099

Cited by 32 publications

(13 citation statements)

References 14 publications

(19 reference statements)

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“…11 Magnetization reversal (MR) and the exchange bias behavior continue to draw the attention of researchers due to their role on potential applications in magnetic read heads, thermally assisted magnetic random access memories, and in other spintronics devices. [12][13][14][15][16][17][18] The phenomenon of MR was predicted by Neel 19 on ferrimagnetic materials such as spinal oxides, where it is due to the different temperature dependences of antiferromagnetically coupled sublattice magnetization. The experimental observations of exchange bias field in oxide coated cobalt and magnetization reversal in cobalt vanadate (IV) are known for a long time.…”

Section: Introductionmentioning

confidence: 95%

Study of magnetization reversal in LaCr1−xFexO3 compounds

Bora

Ravi

2013

Journal of Applied Physics

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Single phase samples of LaCr1−xFexO3 for x = 0–0.50 were prepared and their magnetic properties were studied to understand the magnetization reversal. Magnetization reversal was observed even for 5 at. % of Fe doping and it persisted up to x = 0.15. Ferromagnetic like behavior with a large coercive field of the order of 0.5 T was observed in the intermediate composition range of x = 0.20–0.40. However, for x = 0.45 and 0.50, magnetization reversal was again observed. Magnetization reversal was studied in detail by carrying out field cooled magnetization measurements for different applied magnetic fields. The mechanism of magnetization reversal for low Fe concentrations (x = 0.05–0.15) is basically due to the paramagnetic behavior of doped Fe ions under the influence of negative internal field arising from the antiferromagnetically ordered Cr3+ ions. The value of maximum negative internal field was estimated to be −3.5 kOe. On the other hand, the mechanism of magnetization reversal for x = 0.45 and 0.50 samples is found to be quite different. They could be quantitatively analyzed based on the model, where the competition between single ion anisotropy and Dzyaloshinsky–Moriya interaction is taken into account.

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Section: Introductionmentioning

confidence: 95%

Study of magnetization reversal in LaCr1−xFexO3 compounds

Bora

Ravi

2013

Journal of Applied Physics

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“…The important application and the lack of fundamental understanding of EB effect have attracted considerable attention [10]. The practical implication of EB effect is that it can be used for spintronic devices and magnetic recording media [11,12]. For devices, a robust and adjustable EB effect is required.…”

Section: Introductionmentioning

confidence: 99%

Giant exchange bias behavior and training effect in spin-glass-like NiCr2O4/NiO ceramics

et al. 2015

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NiCr 2 O 4 /NiO ceramic has been synthesized successfully through co-precipitation method to study the magnetic properties. Field cooling (FC) magnetic hysteresis loops measured at low temperature show significant shift in both coercive field and remnant magnetization. It has been plotted that the exchange bias (EB) field can be as large as 11.86 kOe at 10 K followed with an enhanced coercive field. The variation of EB field and shift of remnant magnetization after FC processes shows a regular tendency with increasing temperature and cooling field. Known as training effect, the EB behavior also presents a strong dependence on loop cycle. The cycle dependence of large EB field, vertical shift of magnetization, and coercive field at low temperature can be ascribed to the pinned spins in spin-glass-like (SGL) phase of the system interface. The SGL phase has been proved by Almeida-Thouless line and high field relaxation effect. The disorder structure is responsible for the frustration interface and the formation of SGL phase in the interface.

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“…Magnetic CoFeB, Co, or NiFe thin film can be inserted as a free and/or pinned layer into the MTJ device, as it has a high spin tunneling efficiency and its spin-valve structure exhibits ferromagnetism (FM)/antiferromagnetism (AFM) exchange-biasing anisotropy [7][8][9][10]. Moreover, the favorable characteristics of the MTJ device, including high tunneling magnetoresistance (TMR), strength, and durability, are critical to operation of an MTJ device at room temperature (RT) and in high-temperature environments [11,12].…”

Section: Introductionmentioning

confidence: 99%