Exchange Bias Modifications in NiFe/FeMn/NiFe Trilayer by a Nonmagnetic Interlayer

Yoon, S. M.; Sankaranarayanan, V. K.; Kim, C. O.; Kim, C. G.

doi:10.4283/jmag.2005.10.3.099

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2007

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“…Important factors include interfacial roughness [1,2], interfacial interdiffusion of atoms [3][4][5][6], and the texture and grain size of AFM thin films [7,8]. Previously, we investigated the magneto-transport properties and interlayer diffusion behavior of synthetic B-SVs and T-SVs [3].…”

Section: Introductionmentioning

confidence: 99%

Effect of interface intermixing on the magnetoresistive and the exchange coupling in bottom‐ and top‐spin valves

Kim

Park

Lee

2007

Phys. Status Solidi (c)

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We investigated the interfacial mixing phenomena associated with magnetoresistance and exchange coupling in a top spin valve (T-SV) and bottom spin valve (B-SV) at IrMn/CoFe and CoFe/IrMn interfaces. The difference in the surface free energies of IrMn and CoFe is the major factor determining the degree to which interfacial mixing occurs, but it depends on the deposition sequence. A B-SV featuring a gradational IrMn/CoFe interface had a small H ex in the as-deposited state, but showed improved exchange coupling on annealing as a result of limited interdiffusion. By contrast, a T-SV featuring a sharp CoFe/IrMn interface had a high H ex in the as-deposited state, but suffered a reduction in exchange coupling on annealing, due to a moderate level of interdiffusion.

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