2015
DOI: 10.1016/j.spmi.2015.03.040
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Exchange bias in FeNi/FeMn/FeNi multilayers

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Cited by 12 publications
(8 citation statements)
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References 37 publications
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“…In literature, it is found that there is a critical thickness of AFM layer where the onset of EB occurs [8]. It is reported that in sputter deposited thin film samples the critical thickness is above ~ 5 nm [27]. the critical thickness, H EB continues to increase and then a peak in H EB is found [8].…”
Section: Resultsmentioning
confidence: 99%
“…In literature, it is found that there is a critical thickness of AFM layer where the onset of EB occurs [8]. It is reported that in sputter deposited thin film samples the critical thickness is above ~ 5 nm [27]. the critical thickness, H EB continues to increase and then a peak in H EB is found [8].…”
Section: Resultsmentioning
confidence: 99%
“…The small effect of interfacial defects is in line with the domain‐state model of EB [ 6,7,29 ] and experiments proving that the AFM bulk is mainly responsible for EB. [ 11,30–34 ] As also the coercivity is only weakly affected by the sputtering at the interface, we can assume that the coupling across the interface is not significantly influenced by the sputtering. The stronger effect of the more deeply buried defects is explained by a model we have previously used to explain the increase in Heb and Tnormalb with NixMn100x AFM layer thickness.…”
Section: Discussionmentioning
confidence: 99%
“…In the past few years, different systems were explored experimentally and evidence was always favoring the idea that the bulk spin structure of an AFM plays an important role in deciding the EB effect. [11,[30][31][32][33][34] These reports proposed that the bulk AFM incorporates uncompensated moments to hold or pin the neighboring FM layers in one direction. Recently, Khan et al [33] reported the contribution of the bulk spin structure in single-crystalline Ni/NiMn/Ni trilayers.…”
Section: Doi: 101002/pssr202100195mentioning
confidence: 99%
“…Initially, the EB effect was believed to be of interfacial nature [4,5], which was backed by some models [6][7][8][9]. More recent findings showed that the effect is not purely an interfacial one but the AFM bulk also plays a role [10][11][12][13], which is captured within the domainstate model [14][15][16]. It explains EB in terms of uncompensated pinned moments or pinning centers within the AFM layer.…”
Section: Introductionmentioning
confidence: 98%
“…The technological importance and interesting physics involved in EB has triggered massive research work to reveal its complex and subtle nature [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23]. Initially, the EB effect was believed to be of interfacial nature [4,5], which was backed by some models [6][7][8][9].…”
Section: Introductionmentioning
confidence: 99%