2009
DOI: 10.1016/j.spmi.2009.01.007
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Exchange Bias in fcc-CoPt/CoO/Si films as a function of annealing treatment

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Cited by 4 publications
(7 citation statements)
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References 10 publications
(13 reference statements)
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“…As reported in Ref. [20], the annealing treatment caused the growth of the AFM clusters and enhanced their anisotropy, which resulted in an improvement of exchange coupling. Also according to Ref.…”
supporting
confidence: 57%
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“…As reported in Ref. [20], the annealing treatment caused the growth of the AFM clusters and enhanced their anisotropy, which resulted in an improvement of exchange coupling. Also according to Ref.…”
supporting
confidence: 57%
“…Also according to Ref. [20], if increasing the annealing temperature to 600 ∘ C for 2 h, a Co 3 O 4 phase forms, which will weaken the strength of exchange coupling dramatically. Another experiment carried out by our colleagues also proved this.…”
mentioning
confidence: 89%
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“…Then, a strict control over the growth mechanism and deposition parameters is of crucial importance, although the possibility of varying the interface roughness without introducing other variables always represents a great challenge. In [94], the exchange coupling at the CoPt/CoO interface have been modulated by thermal treatments on the CoO antiferromagnetic layer in order to investigate their influence on the magnetic behavior of the system. To this purpose, an fcc CoPt layer was pulsed laser deposited on top of a CoO underlayer and, prior to CoPt deposition, a thermal annealing at the AFM layer for 60′ at 600 °C have been performed.…”
Section: Roughnessmentioning
confidence: 99%
“…Moreover, the laser source is outside the vacuum chamber, and this provides a much larger flexibility in the choice of the material as a target, the geometrical arrangements, and the variation of the deposition parameters. Thanks to the congruent removal of the target constituents, PLD has been widely used to deposit complex metal oxide films, such as high-Tc superconductors, hexaferrites, and multiferroics. , Furthermore, in the last few decades, this technique has been successfully exploited for the growth of metallic thin films and multilayers, paving the way for a simpler process to fabricate a new class of advanced multifunctional films and heterostructures (i.e., ferroelectric/ferromagnetic materials) where complex oxides and metallic alloys are properly combined.…”
Section: Introductionmentioning
confidence: 99%