Exchange bias affected by ion beam etching of FeMn surface in Ta/NiFe/FeMn

Abstract

The exchange bias field of Ta(5)/NiFe(10)/FeMn(20) (nm) multilayer films are investigated as a function of FeMn thickness, where the FeMn layer is etched by Ar ion beam. It was found that the surface roughness is decreased by ion beam etching without the introduction of significant structural damage in the FeMn layer. Exchange bias improvement is observed even at the initiation of FeMn surface etching. The exchange field increases as the etching proceeds and shows maximum at FeMn thickness of 7 nm. The exchange bias begins to decrease with further etching and drops at the FeMn thickness of 5 nm. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Complex Study of Magnetization Reversal Mechanisms of FeNi/FeMn Bilayers Depending on Growth Conditions

“…The estimated value of average grain size of the NiFe layer is less than in the previous series (NiFe (40 nm)/FeMn (20 nm)) due to the difference in layer thicknesses (47 nm in this series vs. 40 nm in the previous one). The grain size of the FeMn layer simultaneously increases with an increase in the film thickness, and the calculated values of the grain size are comparable with those previously obtained [ 37 , 38 , 39 ]. The grain size d (FeMn) of the FeMn phase as a function of the layer thickness is presented in Table 2 .…”