2000
DOI: 10.1016/s0304-8853(99)00662-9
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Exchange anisotropy of epitaxial (001) NiMn/NiFe

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Cited by 6 publications
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“…Samples with the structure Si(100)/Cu(15 nm)/ Ni 80 Fe 20 (35 nm)/NiMn(50 nm)/Co(t nm)/Pd(15 nm) were grown in an e-beam evaporation system, and the thickness of Co was varied from 5 to 25 nm. Cu was used to initiate (001) epitaxial growth, and thick Ni 80 Fe 20 was used to prevent the Cu from diffusing into NiMn [68]. No external ®eld was applied during the deposition, but after the deposition the samples were ®eld-annealed ex-situ in a ®eld of 1000 Oe at 2808C in vacuum.…”
Section: Exhange-bias Anisotropymentioning
confidence: 99%
“…Samples with the structure Si(100)/Cu(15 nm)/ Ni 80 Fe 20 (35 nm)/NiMn(50 nm)/Co(t nm)/Pd(15 nm) were grown in an e-beam evaporation system, and the thickness of Co was varied from 5 to 25 nm. Cu was used to initiate (001) epitaxial growth, and thick Ni 80 Fe 20 was used to prevent the Cu from diffusing into NiMn [68]. No external ®eld was applied during the deposition, but after the deposition the samples were ®eld-annealed ex-situ in a ®eld of 1000 Oe at 2808C in vacuum.…”
Section: Exhange-bias Anisotropymentioning
confidence: 99%