Exchange and radiative lifetimes for close Frenkel pairs on the zinc sublattice of ZnSe

Barry, W. A.; Watkins, G. D.

doi:10.1103/physrevb.54.7789

Cited by 24 publications

(8 citation statements)

References 14 publications

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“…76,87 From simple reasoning, we expect an increase of W max with increasing ionization energy of an acceptor E A due to increasing localization of the bound hole. Indeed, the maximum rate of the DAP transitions in the effective-mass approximation upon neglecting many-body effects is given by 80,88…”

Section: B Time-resolved Luminescencementioning

confidence: 99%

Luminescence properties of defects in GaN

Reshchikov¹,

Morkoç̌²

2005

Journal of Applied Physics

1,806

119

1,666

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Gallium nitride ͑GaN͒ and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet ͑UV͒ emitters and detectors ͑in photon ranges inaccessible by other semiconductors͒ and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects ͑vacancies, interstitial, and antisites͒, intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of other impurities, such as C, Si, H, O, Be, Mn, Cd, etc., on the luminescence properties of GaN are also reviewed. Further, atypical luminescence lines which are tentatively attributed to the surface and structural defects are discussed. The effect of surfaces and surface preparation, particularly wet and dry etching, exposure to UV light in vacuum or controlled gas ambient, annealing, and ion implantation on the characteristics of the defect-related emissions is described.

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Section: B Time-resolved Luminescencementioning

confidence: 99%

Luminescence properties of defects in GaN

Reshchikov¹,

Morkoç̌²

2005

Journal of Applied Physics

1,806

119

1,666

View full text Add to dashboard Cite

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“…The particular choice made for A in Ref. 3 does not appear to satisfy this, and, factoring in this new information, a better choice could be made. For example, taking the (300)a/2 interstitial to vacancy distance assignment for B made there, a better choice for A might be the previously unassigned (210)a/2 pair ͑see Table I in Ref. 3͒.…”

Section: Assignment Of Frenkel Pair Separationsmentioning

confidence: 98%

Electronic structure and migrational properties of interstitial zinc in ZnSe

Chow¹,

Watkins²

1999

Phys. Rev. B

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We report optically detected electron paramagnetic resonance via photoluminescence in ZnSe after in situ 4.2 K irradiation with 2.5 MeV electrons. The isolated interstitial is identified in the T d site surrounded by four zinc atoms, (Zn i ) Zn ϩ , as well as in the T d site surrounded by four Se atoms, (Zn i ) Se ϩ . Analysis of the central 67 Zn and neighboring 77 Se atom hyperfine interactions for the two sites, plus other considerations, allows estimates of their second donor levels to be at ϳ1.6 and ϳ1.0 eV below the conduction band, respectively. Migration of the interstitial under optical excitation at 1.5-25 K is detected by monitoring its cyclic conversion between the two configurations, as well as by interconversion between various close zinc-interstitial-zincvacancy Frenkel pairs. The dependence of the process on temperature, excitation wavelength and intensity, and sample history is described, and a possible model for the mechanism is proposed. ͓S0163-1829͑99͒16235-0͔ PHYSICAL REVIEW B 15 SEPTEMBER 1999-II VOLUME 60, NUMBER 12 PRB 60 0163-1829/99/60͑12͒/8628͑12͒/$15.00 8628

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“…Their signals are positive and go through a maximum at a microwave modulation frequency f m ϳ500 Hz, corresponding to radiative lifetimes of ϳ330sec. 28 However, at very low modulation frequencies, D1 appears to pick up negative contributions to its signals. This has been confirmed directly, where the advantage of its strong PL polarization properties ͑to be described in Sec.…”

Section: A D1 and D2mentioning

confidence: 99%

Optically detected electron paramagnetic resonance of AlN single crystals

et al. 1999

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AlN single crystals have been investigated using photoluminescence ͑PL͒ and optical detection of electron paramagnetic resonance in the PL ͑ODEPR͒. All crystals were found to exhibit intense PL extending from the visible into the near infrared. Several Sϭ1 centers, each with its own distinct emission spectrum, and distant Sϭ1/2 pair recombination centers have been observed via ODEPR. In all except one center, D5, no hyperfine structure was observed preventing chemical identification of the impurity involved. In the case of D5 the partially resolved hyperfine structure suggests interaction with a 100% abundant nucleus of Iϳ5/2. We present arguments to associate it with a displaced host aluminum atom.

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Exchange and radiative lifetimes for close Frenkel pairs on the zinc sublattice of ZnSe

Cited by 24 publications

References 14 publications

Luminescence properties of defects in GaN

Luminescence properties of defects in GaN

Electronic structure and migrational properties of interstitial zinc in ZnSe

Optically detected electron paramagnetic resonance of AlN single crystals

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