Excess Oxygen in LaMnO3+δ

Growth control of stoichiometry in LaMnO3 epitaxial thin films by pulsed laser deposition

“…We have found that thin films grown in high oxygen pressures mostly show FM behaviors in their as-grown state, but still remain as insulators, contradicting to some reported results [15]. Such off-stoichiometry has been found to originate from La and Mn vacancies, which result in excessive oxygen [16], and from La deficiency [17]. Moreover, the epitaxial strain induced by the lattice mismatch between the film and the substrate also can be a reason for the FM state.…”

Determination of A-site deficiency in lanthanum manganite by XRD intensity ratio

“…3. Since the perovskite-structured oxide cannot contain excessive oxygen at interstitial positions, the incorporation of excessive oxygen leads to the creation of (8) cation vacancies at both A and B sites [14,15]. Thus, oxygen-excessive LaMnO 3+d is more appropriately represented by the formula La 1Ày Mn 1Ày O 3 with y=d/(3+d), and simulation was done with this defect chemistry model.…”

Phase transition of O-orthorhombic LaMn0.95O3.02 at high-temperature

“…According to the study on nonstoichiometry of lanthanum manganite, the oxygen content of lanthanum manganite equilibrated in higher temperature was lower [14][15][16]. The sample studied in this work was quenched from high-temperature (1473 K).…”