Excess noise measurement in In/sub 0.53/Ga/sub 0.47/As

Goh, Y.L.; Ng, Jo Shien; Tan, Chee Hing; Ng, W.K.; David, J.P.R.

doi:10.1109/lpt.2005.857239

Cited by 19 publications

(5 citation statements)

References 19 publications

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“…2(b)] digital alloy APDs did not differ significantly from their random alloy counterparts. 47,48 However, we observed a significant decrease in excess noise in the InAlAs [Fig. 2(c)] digital alloy compared with both accepted literature and experimental values of k $ 0.2.…”

supporting

confidence: 74%

Toward deterministic construction of low noise avalanche photodetector materials

Rockwell

Ren

Woodson

et al. 2018

Applied Physics Letters

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Over the past 40þ years, III-V materials have been intensively studied for avalanche photodetectors, driven by applications including optical communications, imaging, quantum information processing, and autonomous vehicle navigation. Unfortunately, impact ionization is a stochastic process that introduces noise, thereby limiting sensitivity and achievable bandwidths, leading to intense effort to mitigate this noise through the identification of different materials and device structures. Exploration of these materials has seen limited success as it has proceeded in a largely ad hoc fashion due to little consensus regarding which fundamental properties are important. Here, we report an exciting step toward deterministic design of low-noise avalanche photodetector materials by alternating the composition at the monolayer scale; this represents a dramatic departure from previous approaches, which have concentrated on either unconventional compounds/alloys or nanoscale band-engineering. In particular, we demonstrate how to substantially improve upon the noise characteristics of the current state-of-the art telecom avalanche multipliers, In 0.52 Al 0.48 As grown on InP substrates, by growing the structure as a strain-balanced digital alloy of InAs and AlAs layers, each only a few atomic layers thick. The effective k-factor, which has historically been considered a fundamental material property, was reduced by 6-7Â from k ¼ 0.2 for bulk In 0.52 Al 0.48 As to k ¼ 0.05 by using the digital alloy technique. We also demonstrate that these "digital alloys" can significantly extend the photodetector cutoff wavelength well beyond those of their random alloy counterparts.

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supporting

confidence: 74%

Toward deterministic construction of low noise avalanche photodetector materials

Rockwell

Ren

Woodson

et al. 2018

Applied Physics Letters

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“…The measurement system described here has been used widely to determine F (M) in a variety of avalanche structures and material systems [13][14][15][16]. Results for a GaAs p + -i-n + structure, grown by conventional solid-source MBE on an n + (1 0 0) oriented GaAs substrate, are presented here to demonstrate the system's capabilities.…”

Section: Measurementsmentioning

confidence: 99%

Excess noise measurement in avalanche photodiodes using a transimpedance amplifier front-end

Lau

Tan

et al. 2006

Meas. Sci. Technol.

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We report a versatile system for measuring excess noise and multiplication in avalanche photodiodes, using a transimpedance amplifier front-end and based on phase-sensitive detection, which permits accurate measurement in the presence of a high dark current. The system, which we have used successfully on a wide variety of materials and device structures, can measure reliably the excess noise factor of devices with a capacitance of up to ∼50 pF.

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“…Previously, the lowest noise with favorable impact ionization characteristics were realized with Si in the visible and nearinfrared range, [41][42][43][44] and InAs [45][46][47][48][49] and (Hg,Cd)Te [50,51] in the mid-infrared spectrum. In comparison, (In,Ga)As/(In,Al)As [52,53] random alloy APDs exhibit significantly higher noise than Si, (Hg,Cd)Te or InAs, which are the highest performance telecommunications APDs. In the recent past, digital alloy (In,Al)As APDs have demonstrated lower noise compared to their random alloy counterpart [15].…”

Section: Resultsmentioning

confidence: 96%

Atomistic Transport Modeling, Design Principles, and Empirical Rules for Low-Noise III-V Digital-Alloy Avalanche Photodiodes

et al. 2022

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A series of III-V ternary and quarternary digital alloy avalanche photodiodes (APDs) have recently been seen to exhibit very low excess noise. Using band inversion of an environment-dependent atomistic tight binding description of short period superlattices, we argue that a combination of increased effective mass, minigaps and band split-off are primarily responsible for the observed superior performance. These properties significantly limit the ionization rate of one carrier type, either holes or electrons, making the avalanche multiplication process unipolar in nature. The unipolar behavior in turn reduces the stochasticity of the multiplication gain. The effects of band folding on carrier transport are studied using the Non-Equilibrium Green's Function Method that accounts for quantum tunneling, and Boltzmann Transport Equation model for scattering. It is shown here that carrier transport by intraband tunneling and optical phonon scattering are reduced in materials with low excess noise. Based on our calculations, we propose five simple inequalities that can be used to approximately evaluate the suitability of digital alloys for designing low noise photodetectors. We evaluate the performance of multiple digital alloys using these criteria and demonstrate their validity.

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Excess noise measurement in In/sub 0.53/Ga/sub 0.47/As

Cited by 19 publications

References 19 publications

Toward deterministic construction of low noise avalanche photodetector materials

Toward deterministic construction of low noise avalanche photodetector materials

Excess noise measurement in avalanche photodiodes using a transimpedance amplifier front-end

Atomistic Transport Modeling, Design Principles, and Empirical Rules for Low-Noise III-V Digital-Alloy Avalanche Photodiodes

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