Excess carrier lifetime of 3C–SiC measured by the microwave photoconductivity decay method

Abstract

Minority carrier diffusion length measurements in 6H-SiC J. Appl. Phys. 97, 053703 (2005); 10.1063/1.1853501Influence of crystal quality on the electronic properties of n-type 3C-SiC grown by low temperature low pressure chemical vapor deposition

Photoionization processes of rare-earth dopant ions in ionic crystals

“…Previously, microwave studies of photoconductivity were performed under valence band to conduction band excitation for AgCl powders (forbidden band gap ¼ 3 eV) [54], with nanocrystalline semiconductors [55] and with impurity doped crystals possessing semiconducting properties [56][57][58][59]. For wide-band-gap crystalline materials however, observable microwave signals are supposed to be considerably smaller.…”

Study of Carrier Emission and Capture Processes at Electron Traps in 3C-SiC

“…Such a study is very important for SiC, because a long lifetime of excess carriers (or persistent photoconductivity) has been observed for SiC. [6][7][8][9][10] It is well known that a trap with a very small σ T (or a large E cap ) for majority carriers causes persistent photoconductivity. The DX center in Al x Ga 1−x As is the best known example of such defects.…”

Regenerative feedback resonant circuit to detect transient changes in electromagnetic properties of semi-insulating materials

“…36 Measurements of microwave photoconductive decay are now being developed as a sensitive measure of the photoinduced carrier lifetimes. [37][38][39][40] The need is to understand, nondestructively and using noncontact techniques, the quasisteady-state photoconductance of nascent Si wafers and/or surface passivated for optoelectronic and photovoltaic devices, such as high efficiency solar cells. The measurements in Ref.…”