The search of new two-dimensional (2D) materials with novel optical and electronic properties is always desirable for material development. Here, we report a comprehensive theoretical prediction of 2D SiC compounds with different stoichiometries from C-rich to Si-rich. Besides the previously known hexagonal SiC sheet, we identified two types of hitherto-unknown structural motifs with distinctive bonding features. The first type of 2D SiC monolayer, including t-SiC and t-Si 2 C sheet, can be described by tetragonal lattice. Among them, t-SiC monolayer sheet is featured by each carbon atom binds with four neighboring silicon atoms in almost the same plane, constituting a quasi-planar four-coordinated rectangular moiety. More interestingly, our calculations demonstrate that this structure exhibits a strain-dependent insulator-semimetal transition, suggesting promising applications in strain-dependent optoelectronic sensors. The second type of 2D SiC sheet is featured by silagraphyne with acetylenic linkages(-C≡C-). Silagraphyne shows both high pore sizes and Poisson's ratio. These properties make them a potentially important material for applications in separation membranes and catalysis. Moreover, one of the proposed structures, γ-silagraphyne, is a direct-band-gap semiconductor with a bandgap of 0.89 eV, which has a strong absorption peak in the visible-light region, giving a promising application in ultra-thin transistors, optical sensor devices and solar cell devices.Since the demonstration of the first isolated graphene sheet in 2004, 2D atomic crystals have received much attention. For graphene, due to its many extraordinary properties, it has potential applications in a wide range of areas. However, the pristine graphene is a gapless semi-metal, which means that it is difficult to control the number of carriers. This dramatically limits its applications in the field effect transistor, photovoltaic cell, and etc. Thus, the subject of finding new 2D materials beyond graphene is one of the most active fields of current material research. These research include graphyne, single-layer hexagonal boron nitride (h-BN), [ [5] Particularly, besides graphene and graphyne, a strong research topic in group-IV 2D elemental monolayers have sprung up in recent years. However, these group-IV 2D elemental derivatives show the properties of Dirac fermion behavior without spin-orbit coupling, which create a set of challenges for application in conventional electronic devices due to the lack of band gap at the Fermi level.2D SiC have recently emerged as a promising material with tunable band gaps for potential applications in optoelectronics and electronics.11 Especially, inspired by the successful syntheses of the graphene-like hexagonal SiC sheet in experiment,12 a few carbon-rich SiC monolayers, such as paraSiC 3 ,[6] g-SiC 2 , [7] and pt-SiC 2 , [8] were predicted at one particular stoichiometry. Among all of these newly structures, g-SiC 2 sheet, a direct band gap of 1.09 eV is nearly ideal material for flexible optoelectro...