Exceptional high Seebeck coefficient and gas-flow-induced voltage in multilayer graphene

Li, Xuemei; Yin, Jun; Zhou, Jianxin; Wang, Qin; Guo, Wanlin

doi:10.1063/1.4707417

Cited by 61 publications

(43 citation statements)

References 32 publications

(45 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Different from the monolayer–bilayer junction, the peak S is larger in monolayer graphene than in multilayer graphene. It has been experimentally demonstrated that S varies nonmonotonically with the number of graphene layers; it increases first from monolayer to hexa‐layer with a maximum value (54 µV K −1 ) and then gradually decreases to that of graphite flake (13 µV K −1 ) . Our peak S of multilayer graphene is close to this bulk value.…”

Section: Resultssupporting

confidence: 69%

Competing Mechanisms for Photocurrent Induced at the Monolayer–Multilayer Graphene Junction

Zhang

Zheng

Wang

et al. 2018

Small

View full text Add to dashboard Cite

Graphene is characterized by demonstrated unique properties for potential novel applications in photodetection operated in the frequency range from ultraviolet to terahertz. To date, detailed work on identifying the origin of photoresponse in graphene is still ongoing. Here, scanning photocurrent microscopy to explore the nature of photocurrent generated at the monolayer-multilayer graphene junction is employed. It is found that the contributing photocurrent mechanism relies on the mismatch of the Dirac points between the monolayer and multilayer graphene. For overlapping Dirac points, only photothermoelectric effect (PTE) is observed at the junction. When they do not coincide, a different photocurrent due to photovoltaic effect (PVE) appears and becomes more pronounced with larger separation of the Dirac points. While only PTE is reported for a monolayer-bilayer graphene junction in the literature, this work confirms the coexistence of PTE and PVE, thereby extending the understanding of photocurrent in graphene-based heterojunctions.

show abstract

Section: Resultssupporting

confidence: 69%

Competing Mechanisms for Photocurrent Induced at the Monolayer–Multilayer Graphene Junction

Zhang

Zheng

Wang

et al. 2018

Small

View full text Add to dashboard Cite

show abstract

“…5 for the 100 and 200 Hz datasets. Here, a consistent linear dependence is observed between the voltage and the temperature gradient, yielding Seebeck coefficients of -97.1 μV/K and -99.3 μV/K for the 100 and 200 Hz datasets, respectively, which are higher than the in- plane Seebeck coefficients of single layer graphene, ~50 μW/K, at room temperature [29]. The Seebeck coefficient is negative in these devices, since the band offsets (and hence energy barriers) between graphene and BN are much smaller for electrons than holes.…”

supporting

confidence: 62%

Thermoelectric transport across graphene/hexagonal boron nitride/graphene heterostructures

et al. 2014

View full text Add to dashboard Cite

We report thermoelectric transport measurements across a graphene/hexagonal boron nitride (h-BN)/graphene heterostructure device. Using an AC lock-in technique, we are able to separate the thermoelectric contribution to the I-V characteristics of these important device structures. The temperature gradient is measured optically using Raman spectroscopy, which enables us to explore thermoelectric transport produced at material interfaces, across length scales of just 1-2 nm. Based on the observed thermoelectric voltage (∆V) and temperature gradient (∆T), a Seebeck coefficient of -99.3 μV/K is ascertained for the heterostructure device. The obtained Seebeck coefficient can be useful for understanding the thermoelectric component in the cross-plane I-V behaviors of emerging 2D heterostructure devices. These results provide an approach to probing thermoelectric energy conversion in two-dimensional layered heterostructures.Electron transport in the cross-plane direction of layered material heterostructures has recently shown interesting new functionalities that extend far beyond lateral graphene devices. Graphene-based heterojunction devices, such as graphene/silicon and graphene/ gallium arsenide diodes, have demonstrated rectifying behavior and gate-tunable photovoltaic responses [1-10] heterostructure devices made by combining graphene with other 2D materials, such as graphene/ hexagonal boron nitride (h-BN)/graphene and graphene/ MoS 2 , have shown interesting electron tunneling transport, negative differential conductance, and light absorption behaviors [11][12][13][14][15]. In addition to electron transport and light absorption in these graphenebased heterojunctions, heat dissipation in these types of devices is found to be dominated by vertical heat transfer [16,17]. Despite the large in-plane thermal conductivity in graphene and h-BN, the cross-plane thermal conductance of single-and few-layer graphene and h-BN can be rather small because of the atomic scale thickness. Hence, heat dissipation from these 2D heterostructure devices are often limited by thermal transport across the graphene/h-BN junction. A recent measurement has shown that the interface Nano Research

show abstract

“…Regarding graphene, multiple active Nano Res. studies have explored their properties for energy production [18,19]. Recently, graphene was reported to generate an induced voltage by moving a droplet of ionic liquid along the material [20].…”

Section: Introductionmentioning

confidence: 99%

Flow-induced voltage generation in graphene network

Lao

et al. 2015

Nano Res.

View full text Add to dashboard Cite

We report a voltage generator based on a graphene network (GN). In response to the movement of a droplet of ionic solution over a GN strip, a voltage of several hundred millivolts is observed under ambient conditions. In the voltage-generation process, the unique structure of GN plays an important role in improving the rate of electron transfer. Given their excellent mechanical properties, GNs may find applications for harvesting vibrational energy in various places such as raincoats, umbrellas, windows, and other surfaces that are exposed to rain.

show abstract

Exceptional high Seebeck coefficient and gas-flow-induced voltage in multilayer graphene

Cited by 61 publications

References 32 publications

Competing Mechanisms for Photocurrent Induced at the Monolayer–Multilayer Graphene Junction

Competing Mechanisms for Photocurrent Induced at the Monolayer–Multilayer Graphene Junction

Thermoelectric transport across graphene/hexagonal boron nitride/graphene heterostructures

Flow-induced voltage generation in graphene network

Contact Info

Product

Resources

About