Excellent electrostatic control and gate reliability for breakdown enhanced AlGaN/GaN HEMTs with extreme permittivity BaTiO3
Lin Hao,
Tiancheng Hu,
Hui Guo
et al.
Abstract:In this Letter, we investigated the electrostatic control capability and gate reliability of the BaTiO3 integrated AlGaN/GaN HEMTs. The fabricated HEMT exhibits a high peak maximum transconductance of 141 mS/mm, a large ON/OFF current ratio of 4.1 × 109, and a small subthreshold swing of 70.6 mV/dec, attributed to the gate leakage suppression and prominent gate coupling. These parameters demonstrate that the HEMT device with extreme permittivity BaTiO3 dielectric has the excellent electrostatic control capabil… Show more
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