Excellent electroluminescence and electrical characteristics from p-CuO/i-Ga2O3/n-GaN light-emitting diode prepared by magnetron sputtering

Effects of Different Nitrogen Flow Rates on Structure and Optical Characteristics in AlN Films by Reactive Magnetron Sputtering

“…A decrease in the sputtering of Al atoms at a nitrogen gas ow rate of 50% further leads to the formation of lattice vacancies containing Al atoms [20], thereby reducing the refractive index of the lm. According to literature reports [22,23], the refractive index of single-crystal AlN lms is about 2.2, the refractive index values typically observed for amorphous lms fall within the range of 1.8 to 1.9, the refractive index of epitaxial lms ranges from 2.1 to 2.2, the refractive index values commonly observed in polycrystalline lms generally lie within the range of 1.9 to 2.1. Hence, the refractive index of AlN lms obtained through reactive magnetron sputtering aligns with the standard range.…”

Ultra-violet and yellow-green emissions under intriguing bidirectional DC driving based on Au/i-Ga2O3/n-GaN MIS heterojunction light-emitting diodes

“…The electron affinity ( χ ) of Ga 2 O 3 and GaN is 4.00 and 4.2 eV, and the E g value is 4.91 and 3.4 eV, respectively. 48,53,54 The work function of Au is 5.1 eV. The conduction band (CB) barrier (Δ E c ) and valence band (VB) barrier (Δ E v ) of the Ga 2 O 3 /GaN interface were calculated, where Δ E c = χ Ga 2 O 3 − χ GaN = 0.2 eV, Δ E v = E g Ga 2 O 3 − E g GaN − Δ E c = 1.31 eV.…”

“…The electrons of the V N are recombined with the holes in the VB of GaN to produce a purple Gaussian peak (386 nm). 48 The green emission (499 nm) is related to the radiative recombination between E D and the deep acceptor level ( E A ) of n-GaN (green arrow). 59 The red and infrared Gaussian peaks come from the deep level ( D Ls ) transition of n-GaN, which is related to the antisite of nitrogen and even the defect array along the edge dislocation (red arrow).…”

Finite-Size Effects on Cs3Cu2I5 0D Electronic Nanostructures for Ultraviolet-Emitting Applications

“…UV LEDs could also replace conventional mercury lamps with pronounced toxicity. Nowadays, UV LEDs have been fabricated by using nitride-based materials, such as GaN, owing to their high stability and prominent quantum yield efficiency (QYE). , However, the remarkable difficulty involved in the fabrication procedure of the nitride-based devices makes this route a less attractive alternative. Thus, studies searching for efficient emitting materials with adjustable band gap energy such as organic molecules, rare-earth-doped nanoparticles, and zirconia nanowires have been put forward to overcome the challenges in this area.…”