Examination on the current conduction mechanisms of Au/n-Si diodes with ZnO–PVP and ZnO/Ag2WO4 –PVP interfacial layers

Taşçıoğlu, İlke; Pirgholi‐Givi, Gholamreza; Yerişkin, Seçkin Altındal; Azizian‐Kalandaragh, Yashar

doi:10.1007/s10971-023-06177-9

Cited by 14 publications

(4 citation statements)

References 41 publications

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“…MPS diodes offer good logarithmic I-V characteristics, demonstrating strong rectification and linear properties. The equation below can be used to define the I-V relationship (V 3kT/q) of SBDs with R s and a value of n more significant than one, following Thermionic Emission (TE) [14,17,30]:…”

Section: Electrical Propertiesmentioning

confidence: 99%

“…The manufactured SBDs' conduction processes were also examined at the reverse bias, considering Schottky-emission (SE) and Poole-Frenkel emission (PFE) processes. The inverse electronic current (I R ) is computed by equation (8) if PFE is the predominant mechanism [17,37]:…”

Section: Electrical Propertiesmentioning

confidence: 99%

“…It is noteworthy that a theoretical value of β PF is always double that of β SE . The following mathematical expression of this relationship can be defined by [17]:…”

Section: Electrical Propertiesmentioning

confidence: 99%

“…This interlayer also affects electrophysical variables like a leak or reverse saturation current (I 0 ), ideality coefficient (n), potential barrier height, BH (Φ B ), shunt/series resistance (R sh /R s ), rectifying ratio (RR), density and distribution of surface states (N ss ) [6,[13][14][15][16]. The functionality and operating range of SBDs are significantly influenced by various aspects such as the surface preparation of the semiconductor wafer and its doping concentration level, inhomogeneity of BH, the thickness and homogeneity of interlayer [17].…”

Section: Introductionmentioning

confidence: 99%

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Enhanced electrical parameters of the Au/n-Si Schottky barrier diodes with graphite/graphane oxide doped PVC interlayer

Taşçıoğlu,

Badali,

Altındal Yerişkin

2024

Phys. Scr.

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In this work, Schottky diodes (SDs) formed on n-Si substrates were created using polyvinyl-chloride (PVC) and graphite/graphene-oxide (Gt/GO) nanoparticles (NPs) doped PVC interlayers and the conduction mechanisms of the structures were compared to the reference Au/n-Si (MS) diode. The characterization methods, including XRD, FE-SEM, and EDX, are used to analyze Gt/GO NPs and examine their structural, morphological, and analytical properties. In addition to the standard I-V method, modified Norde and Cheung methods were applied to analyze the forward bias I-V characteristics to determine the impact of pure-PVC and (PVC: Gt-GO) interlayers' main electronic parameters on the SDs. The surface state density (Dit) depending on energy was also determined from the forward bias current-voltage by considering the voltage-dependent ideality coefficient, n(V), and barrier height, ΦB(V). The outcomes showed that, as compared to MS structures, both the pure-PVC and (PVC: Gt-GO) interlayer leads to a decrease of n, leakage-current, Dit, an increase of rectification ratio (RR), shunt-resistance (Rsh) and zero-bias barrier-height (ΦB0). The differences in the electronic parameters observed between the I-V, Norde, and Cheung functions indicate that these parameters are highly reliant on the voltage and the computation method utilized. The barrier inhomogeneities at the metal/semiconductor surface also affect the current-transport or conduction mechanisms.

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Section: Electrical Propertiesmentioning

confidence: 99%

Section: Electrical Propertiesmentioning

confidence: 99%

“…It is noteworthy that a theoretical value of β PF is always double that of β SE . The following mathematical expression of this relationship can be defined by [17]:…”

Section: Electrical Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Enhanced electrical parameters of the Au/n-Si Schottky barrier diodes with graphite/graphane oxide doped PVC interlayer

Taşçıoğlu,

Badali,

Altındal Yerişkin

2024

Phys. Scr.

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Phenomenology of M–N rule and high-field conduction in Ge–Te–Se–Sc rare-earth doped glasses

Agarwal,

Dwivedi,

Lohia

et al. 2024

J Mater Sci: Mater Electron

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Electrical properties of PVC:BN nanocomposite as interfacial layer in metal-semiconductor structure

Badali

2024

J Mater Sci: Mater Electron

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In this study, a comprehensive examination is assumed to investigate the influence of interfacial layers composed of polyvinyl chloride (PVC) and polyvinyl chloride-boron nitride (PVC: BN) on the electrical characteristics of the Au/n-Si structure. Two distinct structures, namely Au/PVC/n-Si (MPS1) and Au/PVC: BN/n-Si (MPS2), are fabricated for this purpose. The provided boron nitride (BN) nanostructures are analyzed using X-ray diffraction (XRD) patterns to determine their average crystalline size and surface morphology. Following the structural analysis, current-voltage (I–V) measurements are conducted over an extensive voltage range (± 3 V). Subsequently, the fundamental electrical properties of the developed Schottky structures are determined using various methods and compared. Experimental results indicate that the PVC: BN nanocomposite leads to an increase in the potential barrier height (BH), shunt resistance (Rsh), and rectifying rate (RR = IF/IR), while simultaneously decreasing the ideality factor (n), series resistance (Rs), and surface states density (Nss). It was discovered that the MS structure’s RR was 7 times lower than that of the MPS2 structure. Moreover, the energy-dependent Nss density is also derived using n(V) and ΦB0(V) functions. Based on the ln(IR)−VR0.5 profile at the reverse bias region, the Schottky-emission (SE) type conduction mechanism is effective for MS structures, whereas Poole-Frenkel-emission (PFE) is effective for MPS structures.

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Examination on the current conduction mechanisms of Au/n-Si diodes with ZnO–PVP and ZnO/Ag2WO4 –PVP interfacial layers

Cited by 14 publications

References 41 publications

Enhanced electrical parameters of the Au/n-Si Schottky barrier diodes with graphite/graphane oxide doped PVC interlayer

Enhanced electrical parameters of the Au/n-Si Schottky barrier diodes with graphite/graphane oxide doped PVC interlayer

Phenomenology of M–N rule and high-field conduction in Ge–Te–Se–Sc rare-earth doped glasses

Electrical properties of PVC:BN nanocomposite as interfacial layer in metal-semiconductor structure

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